Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
Abstract Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importan...
Guardado en:
Autores principales: | Xiaodong Zhou, Run-Wu Zhang, Zeying Zhang, Wanxiang Feng, Yuriy Mokrousov, Yugui Yao |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/480baced70884931a9a5847842d66287 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Spin–valley Hall phenomena driven by Van Hove singularities in blistered graphene
por: M. Umar Farooq, et al.
Publicado: (2020) -
High performance Wannier interpolation of Berry curvature and related quantities with WannierBerri code
por: Stepan S. Tsirkin
Publicado: (2021) -
Inhomogeneous strain-induced half-metallicity in bent zigzag graphene nanoribbons
por: Dong-Bo Zhang, et al.
Publicado: (2017) -
Niobium pentoxide: a promising surface-enhanced Raman scattering active semiconductor substrate
por: Yufeng Shan, et al.
Publicado: (2017) -
Charge carrier transition in an ambipolar single-molecule junction: Its mechanical-modulation and reversibility
por: Jian Shao, et al.
Publicado: (2016)