Transverse barrier formation by electrical triggering of a metal-to-insulator transition
Resistive switching usually occurs by the formation of conducting filaments in the direction of current flow. Here the authors study an intriguing type of volatile metal-to-insulator resistive switching in (La,Sr)MnO3, which occurs by the formation of an insulating barrier perpendicular to the curre...
Guardado en:
Autores principales: | , , , , , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/488a75f0a23d4e3da76435f6fd695bbf |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sumario: | Resistive switching usually occurs by the formation of conducting filaments in the direction of current flow. Here the authors study an intriguing type of volatile metal-to-insulator resistive switching in (La,Sr)MnO3, which occurs by the formation of an insulating barrier perpendicular to the current. |
---|