Morphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface

Abstract Semiconductor nanowires with both nano- and micrometre dimensions have been used as effective materials for artificial photosynthesis; however, a single synthesis approach to provide rational control over the macroscopic morphology, which can allow for the high-throughput screening of photo...

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Autores principales:	Tomoki Shinohara, Miyu Yamada, Yuki Sato, Shohei Okuyama, Tatsuto Yui, Masayuki Yagi, Kenji Saito
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/49359cbf5c0244528a2b437a3065d8a3
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spelling	oai:doaj.org-article:49359cbf5c0244528a2b437a3065d8a32021-12-02T12:32:37ZMorphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface10.1038/s41598-017-05292-22045-2322https://doaj.org/article/49359cbf5c0244528a2b437a3065d8a32017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05292-2https://doaj.org/toc/2045-2322Abstract Semiconductor nanowires with both nano- and micrometre dimensions have been used as effective materials for artificial photosynthesis; however, a single synthesis approach to provide rational control over the macroscopic morphology, which can allow for the high-throughput screening of photocatalytic performance, and carrier transfer between oxide and sulphide nanostructures has been poorly known. Our recent findings indicate that a single parameter, Nb foil thickness, in a vapor-phase synthesis method can alter the macroscopic morphology of resulting Nb2O5 nanowires. Thick Nb foil results in a free-standing Nb2O5 film, whereas a thinner foil leads to fragmentation to give a powder. During the synthesis process, a Rh dopant was provided through metal-organic chemical vapor deposition to reduce the Nb2O5 energy gap. Upon irradiation with visible light (λ > 440 nm), the free-standing nanowire film [Nb2O5:Rh-NW(F)] showed photoanodic current with a Faradaic efficiency of 99% for O2 evolution. Under identical irradiation conditions, the powdered counterpart [Nb2O5:Rh-NW(P)] showed activity for O2 evolution in the presence of an electron acceptor. The poor water-reduction ability was greatly enhanced by the Au-catalysed vapor-liquid-solid (VLS) growth of H2-evolving CdS onto the reduction sites of Nb2O5:Rh-NW(P) [Au/CdS/Nb2O5:Rh-NW(P)].Tomoki ShinoharaMiyu YamadaYuki SatoShohei OkuyamaTatsuto YuiMasayuki YagiKenji SaitoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Tomoki Shinohara Miyu Yamada Yuki Sato Shohei Okuyama Tatsuto Yui Masayuki Yagi Kenji Saito Morphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface
description	Abstract Semiconductor nanowires with both nano- and micrometre dimensions have been used as effective materials for artificial photosynthesis; however, a single synthesis approach to provide rational control over the macroscopic morphology, which can allow for the high-throughput screening of photocatalytic performance, and carrier transfer between oxide and sulphide nanostructures has been poorly known. Our recent findings indicate that a single parameter, Nb foil thickness, in a vapor-phase synthesis method can alter the macroscopic morphology of resulting Nb2O5 nanowires. Thick Nb foil results in a free-standing Nb2O5 film, whereas a thinner foil leads to fragmentation to give a powder. During the synthesis process, a Rh dopant was provided through metal-organic chemical vapor deposition to reduce the Nb2O5 energy gap. Upon irradiation with visible light (λ > 440 nm), the free-standing nanowire film [Nb2O5:Rh-NW(F)] showed photoanodic current with a Faradaic efficiency of 99% for O2 evolution. Under identical irradiation conditions, the powdered counterpart [Nb2O5:Rh-NW(P)] showed activity for O2 evolution in the presence of an electron acceptor. The poor water-reduction ability was greatly enhanced by the Au-catalysed vapor-liquid-solid (VLS) growth of H2-evolving CdS onto the reduction sites of Nb2O5:Rh-NW(P) [Au/CdS/Nb2O5:Rh-NW(P)].
format	article
author	Tomoki Shinohara Miyu Yamada Yuki Sato Shohei Okuyama Tatsuto Yui Masayuki Yagi Kenji Saito
author_facet	Tomoki Shinohara Miyu Yamada Yuki Sato Shohei Okuyama Tatsuto Yui Masayuki Yagi Kenji Saito
author_sort	Tomoki Shinohara
title	Morphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface
title_short	Morphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface
title_full	Morphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface
title_fullStr	Morphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface
title_full_unstemmed	Morphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface
title_sort	morphology control of energy-gap-engineered nb2o5 nanowires and the regioselective growth of cds for efficient carrier transfer across an oxide-sulphide nanointerface
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/49359cbf5c0244528a2b437a3065d8a3
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Morphology Control of Energy-Gap-Engineered Nb2O5 Nanowires and the Regioselective Growth of CdS for Efficient Carrier Transfer Across an Oxide-Sulphide Nanointerface

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