Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films

Abstract Adequately understanding band inversion mechanism, one of the significant representations of topological phase, has substantial implications for design and regulation of topological insulators (TIs). Here, by identifying an unconventional band inversion, we propose an intrinsic quantum spin...

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Autores principales:	Sheng-shi Li, Wei-xiao Ji, Ping Li, Shu-jun Hu, Tie Zhou, Chang-wen Zhang, Shi-shen Yan
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/497ec6cbd53c4886b6aa01081f5203ca
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spelling	oai:doaj.org-article:497ec6cbd53c4886b6aa01081f5203ca2021-12-02T16:06:20ZUnconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films10.1038/s41598-017-05420-y2045-2322https://doaj.org/article/497ec6cbd53c4886b6aa01081f5203ca2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05420-yhttps://doaj.org/toc/2045-2322Abstract Adequately understanding band inversion mechanism, one of the significant representations of topological phase, has substantial implications for design and regulation of topological insulators (TIs). Here, by identifying an unconventional band inversion, we propose an intrinsic quantum spin Hall (QSH) effect in iodinated group-V binary (ABI2) monolayers with a bulk gap as large as 0.409 eV, guaranteeing its viable application at room temperature. The nontrivial topological characters, which can be established by explicit demonstration of Z2 invariant and gapless helical edge states, are derived from the band inversion of antibonding states of p x,y orbitals at the K point. Furthermore, the topological properties are tunable under strain engineering and external electric field, which supplies a route to manipulate the spin/charge conductance of edge states. These findings not only provide a new platform to better understand the underlying origin of QSH effect in functionalized group-V films, but also are highly desirable to design large-gap QSH insulators for practical applications in spintronics.Sheng-shi LiWei-xiao JiPing LiShu-jun HuTie ZhouChang-wen ZhangShi-shen YanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sheng-shi Li Wei-xiao Ji Ping Li Shu-jun Hu Tie Zhou Chang-wen Zhang Shi-shen Yan Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films
description	Abstract Adequately understanding band inversion mechanism, one of the significant representations of topological phase, has substantial implications for design and regulation of topological insulators (TIs). Here, by identifying an unconventional band inversion, we propose an intrinsic quantum spin Hall (QSH) effect in iodinated group-V binary (ABI2) monolayers with a bulk gap as large as 0.409 eV, guaranteeing its viable application at room temperature. The nontrivial topological characters, which can be established by explicit demonstration of Z2 invariant and gapless helical edge states, are derived from the band inversion of antibonding states of p x,y orbitals at the K point. Furthermore, the topological properties are tunable under strain engineering and external electric field, which supplies a route to manipulate the spin/charge conductance of edge states. These findings not only provide a new platform to better understand the underlying origin of QSH effect in functionalized group-V films, but also are highly desirable to design large-gap QSH insulators for practical applications in spintronics.
format	article
author	Sheng-shi Li Wei-xiao Ji Ping Li Shu-jun Hu Tie Zhou Chang-wen Zhang Shi-shen Yan
author_facet	Sheng-shi Li Wei-xiao Ji Ping Li Shu-jun Hu Tie Zhou Chang-wen Zhang Shi-shen Yan
author_sort	Sheng-shi Li
title	Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films
title_short	Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films
title_full	Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films
title_fullStr	Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films
title_full_unstemmed	Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films
title_sort	unconventional band inversion and intrinsic quantum spin hall effect in functionalized group-v binary films
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/497ec6cbd53c4886b6aa01081f5203ca
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_version_	1718385020559687680

Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films

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