Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films

Abstract Adequately understanding band inversion mechanism, one of the significant representations of topological phase, has substantial implications for design and regulation of topological insulators (TIs). Here, by identifying an unconventional band inversion, we propose an intrinsic quantum spin...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Sheng-shi Li, Wei-xiao Ji, Ping Li, Shu-jun Hu, Tie Zhou, Chang-wen Zhang, Shi-shen Yan
Format: article
Langue:EN
Publié: Nature Portfolio 2017
Sujets:
R
Q
Accès en ligne:https://doaj.org/article/497ec6cbd53c4886b6aa01081f5203ca
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!