Performance of arsenene and antimonene double-gate MOSFETs from first principles

The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.

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Autores principales:	Giovanni Pizzi, Marco Gibertini, Elias Dib, Nicola Marzari, Giuseppe Iannaccone, Gianluca Fiori
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/49ae8650ef164d33965db1e2de9c405b
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spelling	oai:doaj.org-article:49ae8650ef164d33965db1e2de9c405b2021-12-02T15:35:46ZPerformance of arsenene and antimonene double-gate MOSFETs from first principles10.1038/ncomms125852041-1723https://doaj.org/article/49ae8650ef164d33965db1e2de9c405b2016-08-01T00:00:00Zhttps://doi.org/10.1038/ncomms12585https://doaj.org/toc/2041-1723The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.Giovanni PizziMarco GibertiniElias DibNicola MarzariGiuseppe IannacconeGianluca FioriNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Giovanni Pizzi Marco Gibertini Elias Dib Nicola Marzari Giuseppe Iannaccone Gianluca Fiori Performance of arsenene and antimonene double-gate MOSFETs from first principles
description	The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.
format	article
author	Giovanni Pizzi Marco Gibertini Elias Dib Nicola Marzari Giuseppe Iannaccone Gianluca Fiori
author_facet	Giovanni Pizzi Marco Gibertini Elias Dib Nicola Marzari Giuseppe Iannaccone Gianluca Fiori
author_sort	Giovanni Pizzi
title	Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_short	Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_full	Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_fullStr	Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_full_unstemmed	Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_sort	performance of arsenene and antimonene double-gate mosfets from first principles
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/49ae8650ef164d33965db1e2de9c405b
work_keys_str_mv	AT giovannipizzi performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples AT marcogibertini performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples AT eliasdib performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples AT nicolamarzari performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples AT giuseppeiannaccone performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples AT gianlucafiori performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples
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Performance of arsenene and antimonene double-gate MOSFETs from first principles

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