Performance of arsenene and antimonene double-gate MOSFETs from first principles
The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/49ae8650ef164d33965db1e2de9c405b |
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