Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Oxide memristors exhibit noise in excess of 2–4 orders of magnitude above the baseline at quantized conductance states. Here, the authors measure anomalous electrical noise at these states in tantalum oxide memristors and relate it to thermally-activated atomic fluctuations by numerical simulations....

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Autores principales:	Wei Yi, Sergey E. Savel'ev, Gilberto Medeiros-Ribeiro, Feng Miao, M.-X. Zhang, J. Joshua Yang, Alexander M. Bratkovsky, R. Stanley Williams
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/49c3da1861944894946db973f3c0de79
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spelling	oai:doaj.org-article:49c3da1861944894946db973f3c0de792021-12-02T16:57:00ZQuantized conductance coincides with state instability and excess noise in tantalum oxide memristors10.1038/ncomms111422041-1723https://doaj.org/article/49c3da1861944894946db973f3c0de792016-04-01T00:00:00Zhttps://doi.org/10.1038/ncomms11142https://doaj.org/toc/2041-1723Oxide memristors exhibit noise in excess of 2–4 orders of magnitude above the baseline at quantized conductance states. Here, the authors measure anomalous electrical noise at these states in tantalum oxide memristors and relate it to thermally-activated atomic fluctuations by numerical simulations.Wei YiSergey E. Savel'evGilberto Medeiros-RibeiroFeng MiaoM.-X. ZhangJ. Joshua YangAlexander M. BratkovskyR. Stanley WilliamsNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Wei Yi Sergey E. Savel'ev Gilberto Medeiros-Ribeiro Feng Miao M.-X. Zhang J. Joshua Yang Alexander M. Bratkovsky R. Stanley Williams Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
description	Oxide memristors exhibit noise in excess of 2–4 orders of magnitude above the baseline at quantized conductance states. Here, the authors measure anomalous electrical noise at these states in tantalum oxide memristors and relate it to thermally-activated atomic fluctuations by numerical simulations.
format	article
author	Wei Yi Sergey E. Savel'ev Gilberto Medeiros-Ribeiro Feng Miao M.-X. Zhang J. Joshua Yang Alexander M. Bratkovsky R. Stanley Williams
author_facet	Wei Yi Sergey E. Savel'ev Gilberto Medeiros-Ribeiro Feng Miao M.-X. Zhang J. Joshua Yang Alexander M. Bratkovsky R. Stanley Williams
author_sort	Wei Yi
title	Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
title_short	Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
title_full	Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
title_fullStr	Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
title_full_unstemmed	Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
title_sort	quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/49c3da1861944894946db973f3c0de79
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Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

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