Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
Oxide memristors exhibit noise in excess of 2–4 orders of magnitude above the baseline at quantized conductance states. Here, the authors measure anomalous electrical noise at these states in tantalum oxide memristors and relate it to thermally-activated atomic fluctuations by numerical simulations....
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Autores principales: | Wei Yi, Sergey E. Savel'ev, Gilberto Medeiros-Ribeiro, Feng Miao, M.-X. Zhang, J. Joshua Yang, Alexander M. Bratkovsky, R. Stanley Williams |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
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Materias: | |
Acceso en línea: | https://doaj.org/article/49c3da1861944894946db973f3c0de79 |
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