Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Oxide memristors exhibit noise in excess of 2–4 orders of magnitude above the baseline at quantized conductance states. Here, the authors measure anomalous electrical noise at these states in tantalum oxide memristors and relate it to thermally-activated atomic fluctuations by numerical simulations....

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Wei Yi, Sergey E. Savel'ev, Gilberto Medeiros-Ribeiro, Feng Miao, M.-X. Zhang, J. Joshua Yang, Alexander M. Bratkovsky, R. Stanley Williams
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Q
Acceso en línea:https://doaj.org/article/49c3da1861944894946db973f3c0de79
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares