Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Oxide memristors exhibit noise in excess of 2–4 orders of magnitude above the baseline at quantized conductance states. Here, the authors measure anomalous electrical noise at these states in tantalum oxide memristors and relate it to thermally-activated atomic fluctuations by numerical simulations....

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Auteurs principaux: Wei Yi, Sergey E. Savel'ev, Gilberto Medeiros-Ribeiro, Feng Miao, M.-X. Zhang, J. Joshua Yang, Alexander M. Bratkovsky, R. Stanley Williams
Format: article
Langue:EN
Publié: Nature Portfolio 2016
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Accès en ligne:https://doaj.org/article/49c3da1861944894946db973f3c0de79
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