Two-dimensional electronic transport and surface electron accumulation in MoS2

In absence of dangling bonds, van der Waals layered crystals are expected to have inert surfaces. In contrast, here the authors show presence of surface electron accumulation in MoS2, with a surface electron concentration nearly four orders of magnitude higher than that of MoS2 inner bulk.

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Autores principales:	M. D. Siao, W. C. Shen, R. S. Chen, Z. W. Chang, M. C. Shih, Y. P. Chiu, C.-M. Cheng
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/49c7ae7a86ab49368fc6365d9a1e54ec
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id	oai:doaj.org-article:49c7ae7a86ab49368fc6365d9a1e54ec
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spelling	oai:doaj.org-article:49c7ae7a86ab49368fc6365d9a1e54ec2021-12-02T17:31:27ZTwo-dimensional electronic transport and surface electron accumulation in MoS210.1038/s41467-018-03824-62041-1723https://doaj.org/article/49c7ae7a86ab49368fc6365d9a1e54ec2018-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-03824-6https://doaj.org/toc/2041-1723In absence of dangling bonds, van der Waals layered crystals are expected to have inert surfaces. In contrast, here the authors show presence of surface electron accumulation in MoS2, with a surface electron concentration nearly four orders of magnitude higher than that of MoS2 inner bulk.M. D. SiaoW. C. ShenR. S. ChenZ. W. ChangM. C. ShihY. P. ChiuC.-M. ChengNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-12 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q M. D. Siao W. C. Shen R. S. Chen Z. W. Chang M. C. Shih Y. P. Chiu C.-M. Cheng Two-dimensional electronic transport and surface electron accumulation in MoS2
description	In absence of dangling bonds, van der Waals layered crystals are expected to have inert surfaces. In contrast, here the authors show presence of surface electron accumulation in MoS2, with a surface electron concentration nearly four orders of magnitude higher than that of MoS2 inner bulk.
format	article
author	M. D. Siao W. C. Shen R. S. Chen Z. W. Chang M. C. Shih Y. P. Chiu C.-M. Cheng
author_facet	M. D. Siao W. C. Shen R. S. Chen Z. W. Chang M. C. Shih Y. P. Chiu C.-M. Cheng
author_sort	M. D. Siao
title	Two-dimensional electronic transport and surface electron accumulation in MoS2
title_short	Two-dimensional electronic transport and surface electron accumulation in MoS2
title_full	Two-dimensional electronic transport and surface electron accumulation in MoS2
title_fullStr	Two-dimensional electronic transport and surface electron accumulation in MoS2
title_full_unstemmed	Two-dimensional electronic transport and surface electron accumulation in MoS2
title_sort	two-dimensional electronic transport and surface electron accumulation in mos2
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/49c7ae7a86ab49368fc6365d9a1e54ec
work_keys_str_mv	AT mdsiao twodimensionalelectronictransportandsurfaceelectronaccumulationinmos2 AT wcshen twodimensionalelectronictransportandsurfaceelectronaccumulationinmos2 AT rschen twodimensionalelectronictransportandsurfaceelectronaccumulationinmos2 AT zwchang twodimensionalelectronictransportandsurfaceelectronaccumulationinmos2 AT mcshih twodimensionalelectronictransportandsurfaceelectronaccumulationinmos2 AT ypchiu twodimensionalelectronictransportandsurfaceelectronaccumulationinmos2 AT cmcheng twodimensionalelectronictransportandsurfaceelectronaccumulationinmos2
_version_	1718380610381152256

Two-dimensional electronic transport and surface electron accumulation in MoS2

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