Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal c...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/49ca62e52e804ee3b70050b53afafe78 |
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| Sumario: | In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (<i>I</i><sub>DS</sub>) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower <i>I</i><sub>DS</sub> degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability. |
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