Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal c...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	QST substrate back-barrier layer high thermal conductivity Chemical technology TP1-1185 Chemical engineering TP155-156
Acceso en línea:	https://doaj.org/article/49ca62e52e804ee3b70050b53afafe78
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:49ca62e52e804ee3b70050b53afafe78
record_format	dspace
spelling	oai:doaj.org-article:49ca62e52e804ee3b70050b53afafe782021-11-25T18:19:47ZCharacteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates10.3390/membranes111108482077-0375https://doaj.org/article/49ca62e52e804ee3b70050b53afafe782021-10-01T00:00:00Zhttps://www.mdpi.com/2077-0375/11/11/848https://doaj.org/toc/2077-0375In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (<i>I</i><sub>DS</sub>) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower <i>I</i><sub>DS</sub> degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.Chong-Rong HuangHsien-Chin ChiuChia-Hao LiuHsiang-Chun WangHsuan-Ling KaoChih-Tien ChenKuo-Jen ChangMDPI AGarticleQST substrateback-barrier layerhigh thermal conductivityChemical technologyTP1-1185Chemical engineeringTP155-156ENMembranes, Vol 11, Iss 848, p 848 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	QST substrate back-barrier layer high thermal conductivity Chemical technology TP1-1185 Chemical engineering TP155-156
spellingShingle	QST substrate back-barrier layer high thermal conductivity Chemical technology TP1-1185 Chemical engineering TP155-156 Chong-Rong Huang Hsien-Chin Chiu Chia-Hao Liu Hsiang-Chun Wang Hsuan-Ling Kao Chih-Tien Chen Kuo-Jen Chang Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
description	In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (<i>I</i><sub>DS</sub>) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower <i>I</i><sub>DS</sub> degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.
format	article
author	Chong-Rong Huang Hsien-Chin Chiu Chia-Hao Liu Hsiang-Chun Wang Hsuan-Ling Kao Chih-Tien Chen Kuo-Jen Chang
author_facet	Chong-Rong Huang Hsien-Chin Chiu Chia-Hao Liu Hsiang-Chun Wang Hsuan-Ling Kao Chih-Tien Chen Kuo-Jen Chang
author_sort	Chong-Rong Huang
title	Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
title_short	Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
title_full	Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
title_fullStr	Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
title_full_unstemmed	Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
title_sort	characteristic analysis of algan/gan hemt with composited buffer layer on high-heat dissipation poly-aln substrates
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/49ca62e52e804ee3b70050b53afafe78
work_keys_str_mv	AT chongronghuang characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT hsienchinchiu characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT chiahaoliu characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT hsiangchunwang characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT hsuanlingkao characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT chihtienchen characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT kuojenchang characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates
_version_	1718411317559164928

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Ejemplares similares