Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell

Abstract This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 μm i-layer) mesa photodiode was illuminated by a standard 206 MBq 55Fe radioisotope X-r...

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Autores principales: S. Butera, M. D. C. Whitaker, A. B. Krysa, A. M. Barnett
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Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/49d08d4631ad473fbfa3f78f5eec3d85
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spelling oai:doaj.org-article:49d08d4631ad473fbfa3f78f5eec3d852021-12-02T11:40:32ZTemperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell10.1038/s41598-017-05181-82045-2322https://doaj.org/article/49d08d4631ad473fbfa3f78f5eec3d852017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05181-8https://doaj.org/toc/2045-2322Abstract This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 μm i-layer) mesa photodiode was illuminated by a standard 206 MBq 55Fe radioisotope X-ray source and characterised over the temperature range −20 °C to 100 °C. The electrical power output of the device reached its maximum value of 1.5 pW at a temperature of −20 °C. An open circuit voltage and a short circuit current of 0.82 V and 2.5 pA, respectively, were obtained at −20 °C. While the electrical power output and the open circuit voltage decreased with increasing temperature, an almost flat trend was found for the short circuit current. The cell conversion efficiency decreased from 2.1% at −20 °C to 0.7% at 100 °C.S. ButeraM. D. C. WhitakerA. B. KrysaA. M. BarnettNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
S. Butera
M. D. C. Whitaker
A. B. Krysa
A. M. Barnett
Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell
description Abstract This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 μm i-layer) mesa photodiode was illuminated by a standard 206 MBq 55Fe radioisotope X-ray source and characterised over the temperature range −20 °C to 100 °C. The electrical power output of the device reached its maximum value of 1.5 pW at a temperature of −20 °C. An open circuit voltage and a short circuit current of 0.82 V and 2.5 pA, respectively, were obtained at −20 °C. While the electrical power output and the open circuit voltage decreased with increasing temperature, an almost flat trend was found for the short circuit current. The cell conversion efficiency decreased from 2.1% at −20 °C to 0.7% at 100 °C.
format article
author S. Butera
M. D. C. Whitaker
A. B. Krysa
A. M. Barnett
author_facet S. Butera
M. D. C. Whitaker
A. B. Krysa
A. M. Barnett
author_sort S. Butera
title Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell
title_short Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell
title_full Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell
title_fullStr Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell
title_full_unstemmed Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell
title_sort temperature effects on an ingap (gainp) 55fe x-ray photovoltaic cell
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/49d08d4631ad473fbfa3f78f5eec3d85
work_keys_str_mv AT sbutera temperatureeffectsonaningapgainp55fexrayphotovoltaiccell
AT mdcwhitaker temperatureeffectsonaningapgainp55fexrayphotovoltaiccell
AT abkrysa temperatureeffectsonaningapgainp55fexrayphotovoltaiccell
AT ambarnett temperatureeffectsonaningapgainp55fexrayphotovoltaiccell
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