Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell
Abstract This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 μm i-layer) mesa photodiode was illuminated by a standard 206 MBq 55Fe radioisotope X-r...
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2017
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oai:doaj.org-article:49d08d4631ad473fbfa3f78f5eec3d852021-12-02T11:40:32ZTemperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell10.1038/s41598-017-05181-82045-2322https://doaj.org/article/49d08d4631ad473fbfa3f78f5eec3d852017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05181-8https://doaj.org/toc/2045-2322Abstract This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 μm i-layer) mesa photodiode was illuminated by a standard 206 MBq 55Fe radioisotope X-ray source and characterised over the temperature range −20 °C to 100 °C. The electrical power output of the device reached its maximum value of 1.5 pW at a temperature of −20 °C. An open circuit voltage and a short circuit current of 0.82 V and 2.5 pA, respectively, were obtained at −20 °C. While the electrical power output and the open circuit voltage decreased with increasing temperature, an almost flat trend was found for the short circuit current. The cell conversion efficiency decreased from 2.1% at −20 °C to 0.7% at 100 °C.S. ButeraM. D. C. WhitakerA. B. KrysaA. M. BarnettNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017) |
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Medicine R Science Q S. Butera M. D. C. Whitaker A. B. Krysa A. M. Barnett Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell |
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Abstract This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 μm i-layer) mesa photodiode was illuminated by a standard 206 MBq 55Fe radioisotope X-ray source and characterised over the temperature range −20 °C to 100 °C. The electrical power output of the device reached its maximum value of 1.5 pW at a temperature of −20 °C. An open circuit voltage and a short circuit current of 0.82 V and 2.5 pA, respectively, were obtained at −20 °C. While the electrical power output and the open circuit voltage decreased with increasing temperature, an almost flat trend was found for the short circuit current. The cell conversion efficiency decreased from 2.1% at −20 °C to 0.7% at 100 °C. |
format |
article |
author |
S. Butera M. D. C. Whitaker A. B. Krysa A. M. Barnett |
author_facet |
S. Butera M. D. C. Whitaker A. B. Krysa A. M. Barnett |
author_sort |
S. Butera |
title |
Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell |
title_short |
Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell |
title_full |
Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell |
title_fullStr |
Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell |
title_full_unstemmed |
Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell |
title_sort |
temperature effects on an ingap (gainp) 55fe x-ray photovoltaic cell |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/49d08d4631ad473fbfa3f78f5eec3d85 |
work_keys_str_mv |
AT sbutera temperatureeffectsonaningapgainp55fexrayphotovoltaiccell AT mdcwhitaker temperatureeffectsonaningapgainp55fexrayphotovoltaiccell AT abkrysa temperatureeffectsonaningapgainp55fexrayphotovoltaiccell AT ambarnett temperatureeffectsonaningapgainp55fexrayphotovoltaiccell |
_version_ |
1718395579080376320 |