Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

Abstract An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was anneale...

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Autores principales:	Takashi Matsumae, Ryo Takigawa, Yuichi Kurashima, Hideki Takagi, Eiji Higurashi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/49f74232da0649b3aacdcecb203a17dd
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spelling	oai:doaj.org-article:49f74232da0649b3aacdcecb203a17dd2021-12-02T16:53:10ZLow-temperature direct bonding of InP and diamond substrates under atmospheric conditions10.1038/s41598-021-90634-42045-2322https://doaj.org/article/49f74232da0649b3aacdcecb203a17dd2021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-90634-4https://doaj.org/toc/2045-2322Abstract An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.Takashi MatsumaeRyo TakigawaYuichi KurashimaHideki TakagiEiji HigurashiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Takashi Matsumae Ryo Takigawa Yuichi Kurashima Hideki Takagi Eiji Higurashi Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions
description	Abstract An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.
format	article
author	Takashi Matsumae Ryo Takigawa Yuichi Kurashima Hideki Takagi Eiji Higurashi
author_facet	Takashi Matsumae Ryo Takigawa Yuichi Kurashima Hideki Takagi Eiji Higurashi
author_sort	Takashi Matsumae
title	Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions
title_short	Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions
title_full	Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions
title_fullStr	Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions
title_full_unstemmed	Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions
title_sort	low-temperature direct bonding of inp and diamond substrates under atmospheric conditions
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/49f74232da0649b3aacdcecb203a17dd
work_keys_str_mv	AT takashimatsumae lowtemperaturedirectbondingofinpanddiamondsubstratesunderatmosphericconditions AT ryotakigawa lowtemperaturedirectbondingofinpanddiamondsubstratesunderatmosphericconditions AT yuichikurashima lowtemperaturedirectbondingofinpanddiamondsubstratesunderatmosphericconditions AT hidekitakagi lowtemperaturedirectbondingofinpanddiamondsubstratesunderatmosphericconditions AT eijihigurashi lowtemperaturedirectbondingofinpanddiamondsubstratesunderatmosphericconditions
_version_	1718382854094716928

Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

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