Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide

Abstract Despite recent interest in amorphous ceramics for a variety of nuclear applications, many details of their structure before and after irradiation/implantation remain unknown. Here we investigated the short-range order of amorphous silicon oxycarbide (SiOC) alloys by using the atomic pair-di...

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Autores principales:	Qing Su, Shinsuke Inoue, Manabu Ishimaru, Jonathan Gigax, Tianyao Wang, Hepeng Ding, Michael J. Demkowicz, Lin Shao, Michael Nastasi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4a3337f3b56f48c7b34ab944f1f5b3c9
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spelling	oai:doaj.org-article:4a3337f3b56f48c7b34ab944f1f5b3c92021-12-02T15:05:15ZHelium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide10.1038/s41598-017-04247-x2045-2322https://doaj.org/article/4a3337f3b56f48c7b34ab944f1f5b3c92017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04247-xhttps://doaj.org/toc/2045-2322Abstract Despite recent interest in amorphous ceramics for a variety of nuclear applications, many details of their structure before and after irradiation/implantation remain unknown. Here we investigated the short-range order of amorphous silicon oxycarbide (SiOC) alloys by using the atomic pair-distribution function (PDF) obtained from electron diffraction. The PDF results show that the structure of SiOC alloys are nearly unchanged after both irradiation up to 30 dpa and He implantation up to 113 at%. TEM characterization shows no sign of crystallization, He bubble or void formation, or segregation in all irradiated samples. Irradiation results in a decreased number of Si-O bonds and an increased number of Si-C and C-O bonds. This study sheds light on the design of radiation-tolerant materials that do not experience helium swelling for advanced nuclear reactor applications.Qing SuShinsuke InoueManabu IshimaruJonathan GigaxTianyao WangHepeng DingMichael J. DemkowiczLin ShaoMichael NastasiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Qing Su Shinsuke Inoue Manabu Ishimaru Jonathan Gigax Tianyao Wang Hepeng Ding Michael J. Demkowicz Lin Shao Michael Nastasi Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide
description	Abstract Despite recent interest in amorphous ceramics for a variety of nuclear applications, many details of their structure before and after irradiation/implantation remain unknown. Here we investigated the short-range order of amorphous silicon oxycarbide (SiOC) alloys by using the atomic pair-distribution function (PDF) obtained from electron diffraction. The PDF results show that the structure of SiOC alloys are nearly unchanged after both irradiation up to 30 dpa and He implantation up to 113 at%. TEM characterization shows no sign of crystallization, He bubble or void formation, or segregation in all irradiated samples. Irradiation results in a decreased number of Si-O bonds and an increased number of Si-C and C-O bonds. This study sheds light on the design of radiation-tolerant materials that do not experience helium swelling for advanced nuclear reactor applications.
format	article
author	Qing Su Shinsuke Inoue Manabu Ishimaru Jonathan Gigax Tianyao Wang Hepeng Ding Michael J. Demkowicz Lin Shao Michael Nastasi
author_facet	Qing Su Shinsuke Inoue Manabu Ishimaru Jonathan Gigax Tianyao Wang Hepeng Ding Michael J. Demkowicz Lin Shao Michael Nastasi
author_sort	Qing Su
title	Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide
title_short	Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide
title_full	Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide
title_fullStr	Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide
title_full_unstemmed	Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide
title_sort	helium irradiation and implantation effects on the structure of amorphous silicon oxycarbide
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4a3337f3b56f48c7b34ab944f1f5b3c9
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Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide

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