Waveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction

MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface. Given the solution-processability and tunable work function, MXene...

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Autores principales: Yang Changming, Qin Shiyu, Zuo Yan, Shi Yang, Bie Tong, Shao Ming, Yu Yu
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Lenguaje:EN
Publicado: De Gruyter 2021
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Acceso en línea:https://doaj.org/article/4a79393d8f5443b0805ebf769020a014
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spelling oai:doaj.org-article:4a79393d8f5443b0805ebf769020a0142021-12-05T14:10:56ZWaveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction2192-861410.1515/nanoph-2021-0415https://doaj.org/article/4a79393d8f5443b0805ebf769020a0142021-10-01T00:00:00Zhttps://doi.org/10.1515/nanoph-2021-0415https://doaj.org/toc/2192-8614MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface. Given the solution-processability and tunable work function, MXene also holds great potential for wide-range photodetection and integrated optics. Here, we demonstrate a waveguide integrated Schottky photodetector based on Ti3C2Tx/Si van der Waals heterojunction. Specifically, the barrier of the Schottky photodetector can be adjusted by using simple surface treatment. The work function of the Ti3C2Tx is reduced from 4.66 to 4.43 eV after vacuum annealing, and the barrier height of Ti3C2Tx/p-Si Schottky junction is correspondingly increased from 0.64 to 0.72 eV, leading to 215 nm working wavelength blue-shift. The photodetector exhibits working wavelength tunability in short-wavelength infrared regions due to the engineered Schottky barrier. To our best knowledge, this is the first demonstration of utilizing MXene in waveguide-integrated photodetection, showing the potential applications for various scenarios thanks to the flexible working wavelength range induced by the tunable barrier.Yang ChangmingQin ShiyuZuo YanShi YangBie TongShao MingYu YuDe Gruyterarticle2d materialsmxeneti3c2tx/p-siwaveguide schottky photodetectorsPhysicsQC1-999ENNanophotonics, Vol 10, Iss 16, Pp 4133-4139 (2021)
institution DOAJ
collection DOAJ
language EN
topic 2d materials
mxene
ti3c2tx/p-si
waveguide schottky photodetectors
Physics
QC1-999
spellingShingle 2d materials
mxene
ti3c2tx/p-si
waveguide schottky photodetectors
Physics
QC1-999
Yang Changming
Qin Shiyu
Zuo Yan
Shi Yang
Bie Tong
Shao Ming
Yu Yu
Waveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction
description MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface. Given the solution-processability and tunable work function, MXene also holds great potential for wide-range photodetection and integrated optics. Here, we demonstrate a waveguide integrated Schottky photodetector based on Ti3C2Tx/Si van der Waals heterojunction. Specifically, the barrier of the Schottky photodetector can be adjusted by using simple surface treatment. The work function of the Ti3C2Tx is reduced from 4.66 to 4.43 eV after vacuum annealing, and the barrier height of Ti3C2Tx/p-Si Schottky junction is correspondingly increased from 0.64 to 0.72 eV, leading to 215 nm working wavelength blue-shift. The photodetector exhibits working wavelength tunability in short-wavelength infrared regions due to the engineered Schottky barrier. To our best knowledge, this is the first demonstration of utilizing MXene in waveguide-integrated photodetection, showing the potential applications for various scenarios thanks to the flexible working wavelength range induced by the tunable barrier.
format article
author Yang Changming
Qin Shiyu
Zuo Yan
Shi Yang
Bie Tong
Shao Ming
Yu Yu
author_facet Yang Changming
Qin Shiyu
Zuo Yan
Shi Yang
Bie Tong
Shao Ming
Yu Yu
author_sort Yang Changming
title Waveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction
title_short Waveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction
title_full Waveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction
title_fullStr Waveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction
title_full_unstemmed Waveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction
title_sort waveguide schottky photodetector with tunable barrier based on ti3c2tx/p-si van der waals heterojunction
publisher De Gruyter
publishDate 2021
url https://doaj.org/article/4a79393d8f5443b0805ebf769020a014
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