A self‐biased and all‐in‐one voltage and current reference
Abstract This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA...
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Wiley
2021
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oai:doaj.org-article:4a96b5513d0a4e28bdebc519f9147f492021-11-16T10:18:22ZA self‐biased and all‐in‐one voltage and current reference1350-911X0013-519410.1049/ell2.12037https://doaj.org/article/4a96b5513d0a4e28bdebc519f9147f492021-01-01T00:00:00Zhttps://doi.org/10.1049/ell2.12037https://doaj.org/toc/0013-5194https://doaj.org/toc/1350-911XAbstract This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA structure, the all‐in‐one reference can achieve the average temperature coefficients of 6.6 and 34 ppm/°C of voltage and current reference from −40 to 125 °C, respectively. Meanwhile, the line sensitivities are 0.08%/V and 0.23%/V of voltage and current reference. And the power supply rejection ratio of the voltage reference is −93 dB@100 Hz with the power consumption of 12.6 μW@tt corner and VDD = 2.5 V. The reference circuit is realized in a standard 180 nm CMOS process with the area of 0.0621 mm × mm.Yuanfei WangPing LuoBingzhong YangTianyuan TangBo ZhangWileyarticleElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENElectronics Letters, Vol 57, Iss 1, Pp 6-8 (2021) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| spellingShingle |
Electrical engineering. Electronics. Nuclear engineering TK1-9971 Yuanfei Wang Ping Luo Bingzhong Yang Tianyuan Tang Bo Zhang A self‐biased and all‐in‐one voltage and current reference |
| description |
Abstract This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET. With the help of the low‐temperature‐coefficient resistors and the self‐biased two‐stage OTA structure, the all‐in‐one reference can achieve the average temperature coefficients of 6.6 and 34 ppm/°C of voltage and current reference from −40 to 125 °C, respectively. Meanwhile, the line sensitivities are 0.08%/V and 0.23%/V of voltage and current reference. And the power supply rejection ratio of the voltage reference is −93 dB@100 Hz with the power consumption of 12.6 μW@tt corner and VDD = 2.5 V. The reference circuit is realized in a standard 180 nm CMOS process with the area of 0.0621 mm × mm. |
| format |
article |
| author |
Yuanfei Wang Ping Luo Bingzhong Yang Tianyuan Tang Bo Zhang |
| author_facet |
Yuanfei Wang Ping Luo Bingzhong Yang Tianyuan Tang Bo Zhang |
| author_sort |
Yuanfei Wang |
| title |
A self‐biased and all‐in‐one voltage and current reference |
| title_short |
A self‐biased and all‐in‐one voltage and current reference |
| title_full |
A self‐biased and all‐in‐one voltage and current reference |
| title_fullStr |
A self‐biased and all‐in‐one voltage and current reference |
| title_full_unstemmed |
A self‐biased and all‐in‐one voltage and current reference |
| title_sort |
self‐biased and all‐in‐one voltage and current reference |
| publisher |
Wiley |
| publishDate |
2021 |
| url |
https://doaj.org/article/4a96b5513d0a4e28bdebc519f9147f49 |
| work_keys_str_mv |
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| _version_ |
1718426543136440320 |