Gate-tunable large magnetoresistance in an all-semiconductor spin valve device

The development of spin field effect transistors has been hampered by the low magnetoresistance in the semiconductor spin valve. Here the authors report large and tunable magnetoresistance in a lateral 2DES-based spin valve geometry due to finite electric field effects at the ferromagnet-semiconduct...

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Autores principales:	M. Oltscher, F. Eberle, T. Kuczmik, A. Bayer, D. Schuh, D. Bougeard, M. Ciorga, D. Weiss
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/4ab490f6b4224ff5b33144948c65104a
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spelling	oai:doaj.org-article:4ab490f6b4224ff5b33144948c65104a2021-12-02T14:40:56ZGate-tunable large magnetoresistance in an all-semiconductor spin valve device10.1038/s41467-017-01933-22041-1723https://doaj.org/article/4ab490f6b4224ff5b33144948c65104a2017-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-01933-2https://doaj.org/toc/2041-1723The development of spin field effect transistors has been hampered by the low magnetoresistance in the semiconductor spin valve. Here the authors report large and tunable magnetoresistance in a lateral 2DES-based spin valve geometry due to finite electric field effects at the ferromagnet-semiconductor interface.M. OltscherF. EberleT. KuczmikA. BayerD. SchuhD. BougeardM. CiorgaD. WeissNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q M. Oltscher F. Eberle T. Kuczmik A. Bayer D. Schuh D. Bougeard M. Ciorga D. Weiss Gate-tunable large magnetoresistance in an all-semiconductor spin valve device
description	The development of spin field effect transistors has been hampered by the low magnetoresistance in the semiconductor spin valve. Here the authors report large and tunable magnetoresistance in a lateral 2DES-based spin valve geometry due to finite electric field effects at the ferromagnet-semiconductor interface.
format	article
author	M. Oltscher F. Eberle T. Kuczmik A. Bayer D. Schuh D. Bougeard M. Ciorga D. Weiss
author_facet	M. Oltscher F. Eberle T. Kuczmik A. Bayer D. Schuh D. Bougeard M. Ciorga D. Weiss
author_sort	M. Oltscher
title	Gate-tunable large magnetoresistance in an all-semiconductor spin valve device
title_short	Gate-tunable large magnetoresistance in an all-semiconductor spin valve device
title_full	Gate-tunable large magnetoresistance in an all-semiconductor spin valve device
title_fullStr	Gate-tunable large magnetoresistance in an all-semiconductor spin valve device
title_full_unstemmed	Gate-tunable large magnetoresistance in an all-semiconductor spin valve device
title_sort	gate-tunable large magnetoresistance in an all-semiconductor spin valve device
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4ab490f6b4224ff5b33144948c65104a
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Gate-tunable large magnetoresistance in an all-semiconductor spin valve device

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