Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties

Abstract Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work. Surface potential mapping at the MoS2/GaN heterojunction is done using Kelvin Probe Force Microscopy to measure the conduc...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Monika Moun, Mukesh Kumar, Manjari Garg, Ravi Pathak, Rajendra Singh
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4b16e92056b849fd920403b9e70cb2f4
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:4b16e92056b849fd920403b9e70cb2f4
record_format	dspace
spelling	oai:doaj.org-article:4b16e92056b849fd920403b9e70cb2f42021-12-02T15:08:12ZUnderstanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties10.1038/s41598-018-30237-82045-2322https://doaj.org/article/4b16e92056b849fd920403b9e70cb2f42018-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-30237-8https://doaj.org/toc/2045-2322Abstract Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work. Surface potential mapping at the MoS2/GaN heterojunction is done using Kelvin Probe Force Microscopy to measure the conduction band offset. Current-voltage measurements show a diode like behavior of the heterojunction. The origin of diode like behavior is attributed to unique type II band alignment of the heterojunction. The photocurrent, photoresponsivity and detectivity of the heterojunction are found to be dependent on power density of the light. Photoresponse investigations reveal that the heterojunction is highly sensitive to 405 nm laser with very high responsivity up to 105 A/W. The heterojunction also shows very high detectivity of the order of 1014 Jones. Moreover, the device shows photoresponse in UV region also. These observations suggest that MoS2/GaN heterojunction can have great potential for photodetection applications.Monika MounMukesh KumarManjari GargRavi PathakRajendra SinghNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Monika Moun Mukesh Kumar Manjari Garg Ravi Pathak Rajendra Singh Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
description	Abstract Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work. Surface potential mapping at the MoS2/GaN heterojunction is done using Kelvin Probe Force Microscopy to measure the conduction band offset. Current-voltage measurements show a diode like behavior of the heterojunction. The origin of diode like behavior is attributed to unique type II band alignment of the heterojunction. The photocurrent, photoresponsivity and detectivity of the heterojunction are found to be dependent on power density of the light. Photoresponse investigations reveal that the heterojunction is highly sensitive to 405 nm laser with very high responsivity up to 105 A/W. The heterojunction also shows very high detectivity of the order of 1014 Jones. Moreover, the device shows photoresponse in UV region also. These observations suggest that MoS2/GaN heterojunction can have great potential for photodetection applications.
format	article
author	Monika Moun Mukesh Kumar Manjari Garg Ravi Pathak Rajendra Singh
author_facet	Monika Moun Mukesh Kumar Manjari Garg Ravi Pathak Rajendra Singh
author_sort	Monika Moun
title	Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
title_short	Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
title_full	Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
title_fullStr	Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
title_full_unstemmed	Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
title_sort	understanding of mos2/gan heterojunction diode and its photodetection properties
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/4b16e92056b849fd920403b9e70cb2f4
work_keys_str_mv	AT monikamoun understandingofmos2ganheterojunctiondiodeanditsphotodetectionproperties AT mukeshkumar understandingofmos2ganheterojunctiondiodeanditsphotodetectionproperties AT manjarigarg understandingofmos2ganheterojunctiondiodeanditsphotodetectionproperties AT ravipathak understandingofmos2ganheterojunctiondiodeanditsphotodetectionproperties AT rajendrasingh understandingofmos2ganheterojunctiondiodeanditsphotodetectionproperties
_version_	1718388249331761152

Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties

Ejemplares similares