Photoluminescence study of solution-deposited Cu2BaSnS4 thin films

To experimentally identify the character of radiative transitions in trigonal Cu2BaSnS4, we conduct temperature and excitation intensity dependent photoluminescence (PL) measurements in the temperature range of 15–300 K. The low-temperature near band edge PL spectrum is interpreted as the free excit...

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Auteurs principaux:	S. Levcenko, B. Teymur, D. B. Mitzi, T. Unold
Format:	article
Langue:	EN
Publié:	AIP Publishing LLC 2021
Sujets:	Biotechnology TP248.13-248.65 Physics QC1-999
Accès en ligne:	https://doaj.org/article/4c095de8721a45d59056892be30da514
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spelling	oai:doaj.org-article:4c095de8721a45d59056892be30da5142021-12-01T18:51:23ZPhotoluminescence study of solution-deposited Cu2BaSnS4 thin films2166-532X10.1063/5.0061229https://doaj.org/article/4c095de8721a45d59056892be30da5142021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0061229https://doaj.org/toc/2166-532XTo experimentally identify the character of radiative transitions in trigonal Cu2BaSnS4, we conduct temperature and excitation intensity dependent photoluminescence (PL) measurements in the temperature range of 15–300 K. The low-temperature near band edge PL spectrum is interpreted as the free exciton at 2.11 eV and the bound exciton at 2.08 eV, coupled with associated phonon-assisted transitions. In the low energy region, we assign the dominant defect emission at 1.96 eV to donor–acceptor-pair recombination and the weak broad emission at 1.6 eV to the free-to-bound transition. The activation energies and temperature shift for the radiative transitions are determined and discussed. Above 90 K, the free exciton recombination becomes the dominant radiative transition, with its energy shift mainly governed by the contribution of optical phonons.S. LevcenkoB. TeymurD. B. MitziT. UnoldAIP Publishing LLCarticleBiotechnologyTP248.13-248.65PhysicsQC1-999ENAPL Materials, Vol 9, Iss 11, Pp 111108-111108-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biotechnology TP248.13-248.65 Physics QC1-999
spellingShingle	Biotechnology TP248.13-248.65 Physics QC1-999 S. Levcenko B. Teymur D. B. Mitzi T. Unold Photoluminescence study of solution-deposited Cu2BaSnS4 thin films
description	To experimentally identify the character of radiative transitions in trigonal Cu2BaSnS4, we conduct temperature and excitation intensity dependent photoluminescence (PL) measurements in the temperature range of 15–300 K. The low-temperature near band edge PL spectrum is interpreted as the free exciton at 2.11 eV and the bound exciton at 2.08 eV, coupled with associated phonon-assisted transitions. In the low energy region, we assign the dominant defect emission at 1.96 eV to donor–acceptor-pair recombination and the weak broad emission at 1.6 eV to the free-to-bound transition. The activation energies and temperature shift for the radiative transitions are determined and discussed. Above 90 K, the free exciton recombination becomes the dominant radiative transition, with its energy shift mainly governed by the contribution of optical phonons.
format	article
author	S. Levcenko B. Teymur D. B. Mitzi T. Unold
author_facet	S. Levcenko B. Teymur D. B. Mitzi T. Unold
author_sort	S. Levcenko
title	Photoluminescence study of solution-deposited Cu2BaSnS4 thin films
title_short	Photoluminescence study of solution-deposited Cu2BaSnS4 thin films
title_full	Photoluminescence study of solution-deposited Cu2BaSnS4 thin films
title_fullStr	Photoluminescence study of solution-deposited Cu2BaSnS4 thin films
title_full_unstemmed	Photoluminescence study of solution-deposited Cu2BaSnS4 thin films
title_sort	photoluminescence study of solution-deposited cu2basns4 thin films
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/4c095de8721a45d59056892be30da514
work_keys_str_mv	AT slevcenko photoluminescencestudyofsolutiondepositedcu2basns4thinfilms AT bteymur photoluminescencestudyofsolutiondepositedcu2basns4thinfilms AT dbmitzi photoluminescencestudyofsolutiondepositedcu2basns4thinfilms AT tunold photoluminescencestudyofsolutiondepositedcu2basns4thinfilms
_version_	1718404689875173376

Photoluminescence study of solution-deposited Cu2BaSnS4 thin films

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