Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors

Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced electrostatic control. However, the performance of these devices can be strongly limited by the scattering proces...

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Autores principales:	Jiang Cao, Yu Wu, Hao Zhang, Demetrio Logoteta, Shengli Zhang, Marco Pala
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/4c1bf59adffc410384555f6ff7dd61d0
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spelling	oai:doaj.org-article:4c1bf59adffc410384555f6ff7dd61d02021-12-02T15:02:55ZDissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors10.1038/s41699-021-00238-92397-7132https://doaj.org/article/4c1bf59adffc410384555f6ff7dd61d02021-06-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00238-9https://doaj.org/toc/2397-7132Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced electrostatic control. However, the performance of these devices can be strongly limited by the scattering processes between carriers and phonons, usually occurring at high rates in 2D materials. Here, we use quantum transport simulations calibrated on first-principle computations to report on dissipative transport in antimonene and arsenene n-type FETs at the scaling limit. We show that the widely-used approximations of either ballistic transport or simple acoustic deformation potential scattering result in large overestimation of the ON current, due to neglecting the dominant intervalley and optical phonon scattering processes. We additionally investigate a recently proposed valley engineering strategy to improve the device performance by removing the valley degeneracy and suppressing most of the intervalley scattering channels via an uniaxial strain along the zigzag direction. The method is applicable to other similar 2D semiconductors characterized by multivalley transport.Jiang CaoYu WuHao ZhangDemetrio LogotetaShengli ZhangMarco PalaNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Jiang Cao Yu Wu Hao Zhang Demetrio Logoteta Shengli Zhang Marco Pala Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
description	Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced electrostatic control. However, the performance of these devices can be strongly limited by the scattering processes between carriers and phonons, usually occurring at high rates in 2D materials. Here, we use quantum transport simulations calibrated on first-principle computations to report on dissipative transport in antimonene and arsenene n-type FETs at the scaling limit. We show that the widely-used approximations of either ballistic transport or simple acoustic deformation potential scattering result in large overestimation of the ON current, due to neglecting the dominant intervalley and optical phonon scattering processes. We additionally investigate a recently proposed valley engineering strategy to improve the device performance by removing the valley degeneracy and suppressing most of the intervalley scattering channels via an uniaxial strain along the zigzag direction. The method is applicable to other similar 2D semiconductors characterized by multivalley transport.
format	article
author	Jiang Cao Yu Wu Hao Zhang Demetrio Logoteta Shengli Zhang Marco Pala
author_facet	Jiang Cao Yu Wu Hao Zhang Demetrio Logoteta Shengli Zhang Marco Pala
author_sort	Jiang Cao
title	Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
title_short	Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
title_full	Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
title_fullStr	Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
title_full_unstemmed	Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
title_sort	dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/4c1bf59adffc410384555f6ff7dd61d0
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Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors

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