Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation

Abstract Nanoindentations of monocrystalline silicon are conducted to investigate the phase transformation process at a temperature range from 292 K to 210 K. The load-displacement curves are obtained and the residual indents are detected by Raman spectra. MD simulations are also conducted to identi...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Shunbo Wang, Hang Liu, Lixia Xu, Xiancheng Du, Dan Zhao, Bo Zhu, Miao Yu, Hongwei Zhao
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4c3f68868cb84c17b9b79f3788a3bbe9
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:4c3f68868cb84c17b9b79f3788a3bbe9
record_format	dspace
spelling	oai:doaj.org-article:4c3f68868cb84c17b9b79f3788a3bbe92021-12-02T15:05:41ZInvestigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation10.1038/s41598-017-09411-x2045-2322https://doaj.org/article/4c3f68868cb84c17b9b79f3788a3bbe92017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-09411-xhttps://doaj.org/toc/2045-2322Abstract Nanoindentations of monocrystalline silicon are conducted to investigate the phase transformation process at a temperature range from 292 K to 210 K. The load-displacement curves are obtained and the residual indents are detected by Raman spectra. MD simulations are also conducted to identify the phase state during nanoindentation. The results show that the low temperature has no influence on the generation of Si-II during loading process of indentation, but the phenomenon of pop-out is inhibited with the temperature decreasing. The probability of pop-out occurrence has a dramatic drop from 260 K to 230 K. Both the generation and propagation of Si-III/XII transformed from Si-II are inhibited by the low temperature, and only a-Si was generated as a final phase state.Shunbo WangHang LiuLixia XuXiancheng DuDan ZhaoBo ZhuMiao YuHongwei ZhaoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shunbo Wang Hang Liu Lixia Xu Xiancheng Du Dan Zhao Bo Zhu Miao Yu Hongwei Zhao Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation
description	Abstract Nanoindentations of monocrystalline silicon are conducted to investigate the phase transformation process at a temperature range from 292 K to 210 K. The load-displacement curves are obtained and the residual indents are detected by Raman spectra. MD simulations are also conducted to identify the phase state during nanoindentation. The results show that the low temperature has no influence on the generation of Si-II during loading process of indentation, but the phenomenon of pop-out is inhibited with the temperature decreasing. The probability of pop-out occurrence has a dramatic drop from 260 K to 230 K. Both the generation and propagation of Si-III/XII transformed from Si-II are inhibited by the low temperature, and only a-Si was generated as a final phase state.
format	article
author	Shunbo Wang Hang Liu Lixia Xu Xiancheng Du Dan Zhao Bo Zhu Miao Yu Hongwei Zhao
author_facet	Shunbo Wang Hang Liu Lixia Xu Xiancheng Du Dan Zhao Bo Zhu Miao Yu Hongwei Zhao
author_sort	Shunbo Wang
title	Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation
title_short	Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation
title_full	Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation
title_fullStr	Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation
title_full_unstemmed	Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation
title_sort	investigations of phase transformation in monocrystalline silicon at low temperatures via nanoindentation
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4c3f68868cb84c17b9b79f3788a3bbe9
work_keys_str_mv	AT shunbowang investigationsofphasetransformationinmonocrystallinesiliconatlowtemperaturesviananoindentation AT hangliu investigationsofphasetransformationinmonocrystallinesiliconatlowtemperaturesviananoindentation AT lixiaxu investigationsofphasetransformationinmonocrystallinesiliconatlowtemperaturesviananoindentation AT xianchengdu investigationsofphasetransformationinmonocrystallinesiliconatlowtemperaturesviananoindentation AT danzhao investigationsofphasetransformationinmonocrystallinesiliconatlowtemperaturesviananoindentation AT bozhu investigationsofphasetransformationinmonocrystallinesiliconatlowtemperaturesviananoindentation AT miaoyu investigationsofphasetransformationinmonocrystallinesiliconatlowtemperaturesviananoindentation AT hongweizhao investigationsofphasetransformationinmonocrystallinesiliconatlowtemperaturesviananoindentation
_version_	1718388702268358656

Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation

Ejemplares similares