Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation

Abstract Nanoindentations of monocrystalline silicon are conducted to investigate the phase transformation process at a temperature range from 292 K to 210 K. The load-displacement curves are obtained and the residual indents are detected by Raman spectra. MD simulations are also conducted to identi...

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Autores principales: Shunbo Wang, Hang Liu, Lixia Xu, Xiancheng Du, Dan Zhao, Bo Zhu, Miao Yu, Hongwei Zhao
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/4c3f68868cb84c17b9b79f3788a3bbe9
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