Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The devel...

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Autores principales: Igor M. Dobush, Ivan S. Vasil’evskii, Dmitry D. Zykov, Dmitry S. Bragin, Andrei S. Salnikov, Artem A. Popov, Andrey A. Gorelov, Nikolay I. Kargin
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Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/4cf0c5205a1d46d5871bd175bd001dd1
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spelling oai:doaj.org-article:4cf0c5205a1d46d5871bd175bd001dd12021-11-25T17:24:33ZDevelopment of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications10.3390/electronics102227752079-9292https://doaj.org/article/4cf0c5205a1d46d5871bd175bd001dd12021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2775https://doaj.org/toc/2079-9292This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.Igor M. DobushIvan S. Vasil’evskiiDmitry D. ZykovDmitry S. BraginAndrei S. SalnikovArtem A. PopovAndrey A. GorelovNikolay I. KarginMDPI AGarticleprocess design kitGaAs pHEMTMMICmodelsimulationElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2775, p 2775 (2021)
institution DOAJ
collection DOAJ
language EN
topic process design kit
GaAs pHEMT
MMIC
model
simulation
Electronics
TK7800-8360
spellingShingle process design kit
GaAs pHEMT
MMIC
model
simulation
Electronics
TK7800-8360
Igor M. Dobush
Ivan S. Vasil’evskii
Dmitry D. Zykov
Dmitry S. Bragin
Andrei S. Salnikov
Artem A. Popov
Andrey A. Gorelov
Nikolay I. Kargin
Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
description This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.
format article
author Igor M. Dobush
Ivan S. Vasil’evskii
Dmitry D. Zykov
Dmitry S. Bragin
Andrei S. Salnikov
Artem A. Popov
Andrey A. Gorelov
Nikolay I. Kargin
author_facet Igor M. Dobush
Ivan S. Vasil’evskii
Dmitry D. Zykov
Dmitry S. Bragin
Andrei S. Salnikov
Artem A. Popov
Andrey A. Gorelov
Nikolay I. Kargin
author_sort Igor M. Dobush
title Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_short Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_full Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_fullStr Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_full_unstemmed Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_sort development of a 0.15 μm gaas phemt process design kit for low-noise applications
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/4cf0c5205a1d46d5871bd175bd001dd1
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