Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The devel...

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Auteurs principaux:	Igor M. Dobush, Ivan S. Vasil’evskii, Dmitry D. Zykov, Dmitry S. Bragin, Andrei S. Salnikov, Artem A. Popov, Andrey A. Gorelov, Nikolay I. Kargin
Format:	article
Langue:	EN
Publié:	MDPI AG 2021
Sujets:	process design kit GaAs pHEMT MMIC model simulation Electronics TK7800-8360
Accès en ligne:	https://doaj.org/article/4cf0c5205a1d46d5871bd175bd001dd1
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spelling	oai:doaj.org-article:4cf0c5205a1d46d5871bd175bd001dd12021-11-25T17:24:33ZDevelopment of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications10.3390/electronics102227752079-9292https://doaj.org/article/4cf0c5205a1d46d5871bd175bd001dd12021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2775https://doaj.org/toc/2079-9292This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.Igor M. DobushIvan S. Vasil’evskiiDmitry D. ZykovDmitry S. BraginAndrei S. SalnikovArtem A. PopovAndrey A. GorelovNikolay I. KarginMDPI AGarticleprocess design kitGaAs pHEMTMMICmodelsimulationElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2775, p 2775 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	process design kit GaAs pHEMT MMIC model simulation Electronics TK7800-8360
spellingShingle	process design kit GaAs pHEMT MMIC model simulation Electronics TK7800-8360 Igor M. Dobush Ivan S. Vasil’evskii Dmitry D. Zykov Dmitry S. Bragin Andrei S. Salnikov Artem A. Popov Andrey A. Gorelov Nikolay I. Kargin Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
description	This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.
format	article
author	Igor M. Dobush Ivan S. Vasil’evskii Dmitry D. Zykov Dmitry S. Bragin Andrei S. Salnikov Artem A. Popov Andrey A. Gorelov Nikolay I. Kargin
author_facet	Igor M. Dobush Ivan S. Vasil’evskii Dmitry D. Zykov Dmitry S. Bragin Andrei S. Salnikov Artem A. Popov Andrey A. Gorelov Nikolay I. Kargin
author_sort	Igor M. Dobush
title	Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_short	Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_full	Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_fullStr	Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_full_unstemmed	Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
title_sort	development of a 0.15 μm gaas phemt process design kit for low-noise applications
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/4cf0c5205a1d46d5871bd175bd001dd1
work_keys_str_mv	AT igormdobush developmentofa015mmgaasphemtprocessdesignkitforlownoiseapplications AT ivansvasilevskii developmentofa015mmgaasphemtprocessdesignkitforlownoiseapplications AT dmitrydzykov developmentofa015mmgaasphemtprocessdesignkitforlownoiseapplications AT dmitrysbragin developmentofa015mmgaasphemtprocessdesignkitforlownoiseapplications AT andreissalnikov developmentofa015mmgaasphemtprocessdesignkitforlownoiseapplications AT artemapopov developmentofa015mmgaasphemtprocessdesignkitforlownoiseapplications AT andreyagorelov developmentofa015mmgaasphemtprocessdesignkitforlownoiseapplications AT nikolayikargin developmentofa015mmgaasphemtprocessdesignkitforlownoiseapplications
_version_	1718412406014607360

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

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