Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The devel...
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| Auteurs principaux: | , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
MDPI AG
2021
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| Accès en ligne: | https://doaj.org/article/4cf0c5205a1d46d5871bd175bd001dd1 |
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