Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
A multi-level memory circuit with only amorphous oxide thin-film transistors (Ox-TFTs) is proposed. The proposed circuit comprises two Ox-TFTs and a capacitor. The proposed multi-level memory can modulate threshold voltage freely depending on programming voltages. Low leakage current of Ox-TFT enabl...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/4d679831bcb546fe9547eef75f21caff |
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| Sumario: | A multi-level memory circuit with only amorphous oxide thin-film transistors (Ox-TFTs) is proposed. The proposed circuit comprises two Ox-TFTs and a capacitor. The proposed multi-level memory can modulate threshold voltage freely depending on programming voltages. Low leakage current of Ox-TFT enables the proposed circuit to operate as a memory. We measured transfer characteristics of the proposed circuit and investigated the threshold voltage shift by a simple capacitance model. We found that the proposed memory cell can be used as a multi-level memory. |
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