Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors

A multi-level memory circuit with only amorphous oxide thin-film transistors (Ox-TFTs) is proposed. The proposed circuit comprises two Ox-TFTs and a capacitor. The proposed multi-level memory can modulate threshold voltage freely depending on programming voltages. Low leakage current of Ox-TFT enabl...

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Autores principales:	Jongbin Kim, Seung-Hyuck Lee, Hoon-Ju Chung, Seung-Woo Lee
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Multi-level memory oxide TFT Vth shift Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/4d679831bcb546fe9547eef75f21caff
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spelling	oai:doaj.org-article:4d679831bcb546fe9547eef75f21caff2021-11-19T00:01:04ZMulti-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors2168-673410.1109/JEDS.2019.2914931https://doaj.org/article/4d679831bcb546fe9547eef75f21caff2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8706538/https://doaj.org/toc/2168-6734A multi-level memory circuit with only amorphous oxide thin-film transistors (Ox-TFTs) is proposed. The proposed circuit comprises two Ox-TFTs and a capacitor. The proposed multi-level memory can modulate threshold voltage freely depending on programming voltages. Low leakage current of Ox-TFT enables the proposed circuit to operate as a memory. We measured transfer characteristics of the proposed circuit and investigated the threshold voltage shift by a simple capacitance model. We found that the proposed memory cell can be used as a multi-level memory.Jongbin KimSeung-Hyuck LeeHoon-Ju ChungSeung-Woo LeeIEEEarticleMulti-level memoryoxide TFTVth shiftElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 575-580 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Multi-level memory oxide TFT Vth shift Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Multi-level memory oxide TFT Vth shift Electrical engineering. Electronics. Nuclear engineering TK1-9971 Jongbin Kim Seung-Hyuck Lee Hoon-Ju Chung Seung-Woo Lee Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
description	A multi-level memory circuit with only amorphous oxide thin-film transistors (Ox-TFTs) is proposed. The proposed circuit comprises two Ox-TFTs and a capacitor. The proposed multi-level memory can modulate threshold voltage freely depending on programming voltages. Low leakage current of Ox-TFT enables the proposed circuit to operate as a memory. We measured transfer characteristics of the proposed circuit and investigated the threshold voltage shift by a simple capacitance model. We found that the proposed memory cell can be used as a multi-level memory.
format	article
author	Jongbin Kim Seung-Hyuck Lee Hoon-Ju Chung Seung-Woo Lee
author_facet	Jongbin Kim Seung-Hyuck Lee Hoon-Ju Chung Seung-Woo Lee
author_sort	Jongbin Kim
title	Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
title_short	Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
title_full	Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
title_fullStr	Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
title_full_unstemmed	Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
title_sort	multi-level memory comprising only amorphous oxide thin film transistors
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/4d679831bcb546fe9547eef75f21caff
work_keys_str_mv	AT jongbinkim multilevelmemorycomprisingonlyamorphousoxidethinfilmtransistors AT seunghyucklee multilevelmemorycomprisingonlyamorphousoxidethinfilmtransistors AT hoonjuchung multilevelmemorycomprisingonlyamorphousoxidethinfilmtransistors AT seungwoolee multilevelmemorycomprisingonlyamorphousoxidethinfilmtransistors
_version_	1718420667045511168

Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors

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