Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications

Changhe Huo,1,2,* Mingzhi Dai,2,3,* Yongbin Hu,4 Xingye Zhang,2,3 Weiliang Wang,2,3 Hengbo Zhang,5 Kemin Jiang,2,3 Pengjun Wang,6 Thomas J Webster,7 Liqiang Guo,4 Wenqing Zhu1 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People’s Republic of China; 2N...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Huo C, Dai M, Hu Y, Zhang X, Wang W, Zhang H, Jiang K, Wang P, Webster TJ, Guo L, Zhu W
Formato:	article
Lenguaje:	EN
Publicado:	Dove Medical Press 2019
Materias:	thin film transitors temperature amorphous nano oxide body sensors Medicine (General) R5-920
Acceso en línea:	https://doaj.org/article/4d789810ddc342408763e41a64083538
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:4d789810ddc342408763e41a64083538
record_format	dspace
spelling	oai:doaj.org-article:4d789810ddc342408763e41a640835382021-12-02T09:39:12ZTemperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications1178-2013https://doaj.org/article/4d789810ddc342408763e41a640835382019-11-01T00:00:00Zhttps://www.dovepress.com/temperature-dependence-of-aos-thin-film-nano-transistors-for-medical-a-peer-reviewed-article-IJNhttps://doaj.org/toc/1178-2013Changhe Huo,1,2,* Mingzhi Dai,2,3,* Yongbin Hu,4 Xingye Zhang,2,3 Weiliang Wang,2,3 Hengbo Zhang,5 Kemin Jiang,2,3 Pengjun Wang,6 Thomas J Webster,7 Liqiang Guo,4 Wenqing Zhu1 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People’s Republic of China; 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China; 4Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang 212013, People’s Republic of China; 5School of Electrical Engineering and Information, Sichuan University, Chengdu 610065, People’s Republic of China; 6College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, People’s Republic of China; 7Department of Chemical Engineering, Northeastern University, MA, Boston 02115, USA*These authors contributed equally to this workCorrespondence: Pengjun WangCollege of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, People’s Republic of ChinaEmail wangpengjun@wzu.edu.cnThomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115 USATel +1 617 3736585Email th.webster@neu.eduBackground: A novel temperature dependent amorphous nano oxide semiconductor (AOS) thin-film transistor (TFT) is reported here for the first time, which is vastly different from conventional behavior. In the literature, the threshold voltage of TFTs decreases with increasing temperature. Here, the threshold voltage increased at higher temperatures, which is different from previously reported results and was repeated on different samples.Methods: Electrical experiments (such as I-V measurements and photoelectron spectrometer experiments) were performed in order to explain such behavior. Double sweeping gate voltage measurements were performed to investigate the mechanism for the temperature dependent behavior.Results: It was found that there was a change of trap charge under thermal stress, which was released after the stress.Conclusion: Non-Arrhenius behaviors (including a linear behavior) were obtained for the amorphous nano oxide thin-film transistors within 303&sim;425 K, suggesting their potential to be adjusted by measurement processes and be applied as temperature sensors for numerous medical applications.Keywords: thin film transistors, TFTs, temperature, amorphous nano oxide semiconductors, AOS, body temperature sensors, medical applicationsHuo CDai MHu YZhang XWang WZhang HJiang KWang PWebster TJGuo LZhu WDove Medical Pressarticlethin filmtransitorstemperatureamorphous nano oxidebody sensorsMedicine (General)R5-920ENInternational Journal of Nanomedicine, Vol Volume 14, Pp 8685-8691 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	thin film transitors temperature amorphous nano oxide body sensors Medicine (General) R5-920
spellingShingle	thin film transitors temperature amorphous nano oxide body sensors Medicine (General) R5-920 Huo C Dai M Hu Y Zhang X Wang W Zhang H Jiang K Wang P Webster TJ Guo L Zhu W Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
description	Changhe Huo,1,2,* Mingzhi Dai,2,3,* Yongbin Hu,4 Xingye Zhang,2,3 Weiliang Wang,2,3 Hengbo Zhang,5 Kemin Jiang,2,3 Pengjun Wang,6 Thomas J Webster,7 Liqiang Guo,4 Wenqing Zhu1 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People’s Republic of China; 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China; 4Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang 212013, People’s Republic of China; 5School of Electrical Engineering and Information, Sichuan University, Chengdu 610065, People’s Republic of China; 6College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, People’s Republic of China; 7Department of Chemical Engineering, Northeastern University, MA, Boston 02115, USA*These authors contributed equally to this workCorrespondence: Pengjun WangCollege of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, People’s Republic of ChinaEmail wangpengjun@wzu.edu.cnThomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115 USATel +1 617 3736585Email th.webster@neu.eduBackground: A novel temperature dependent amorphous nano oxide semiconductor (AOS) thin-film transistor (TFT) is reported here for the first time, which is vastly different from conventional behavior. In the literature, the threshold voltage of TFTs decreases with increasing temperature. Here, the threshold voltage increased at higher temperatures, which is different from previously reported results and was repeated on different samples.Methods: Electrical experiments (such as I-V measurements and photoelectron spectrometer experiments) were performed in order to explain such behavior. Double sweeping gate voltage measurements were performed to investigate the mechanism for the temperature dependent behavior.Results: It was found that there was a change of trap charge under thermal stress, which was released after the stress.Conclusion: Non-Arrhenius behaviors (including a linear behavior) were obtained for the amorphous nano oxide thin-film transistors within 303&sim;425 K, suggesting their potential to be adjusted by measurement processes and be applied as temperature sensors for numerous medical applications.Keywords: thin film transistors, TFTs, temperature, amorphous nano oxide semiconductors, AOS, body temperature sensors, medical applications
format	article
author	Huo C Dai M Hu Y Zhang X Wang W Zhang H Jiang K Wang P Webster TJ Guo L Zhu W
author_facet	Huo C Dai M Hu Y Zhang X Wang W Zhang H Jiang K Wang P Webster TJ Guo L Zhu W
author_sort	Huo C
title	Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
title_short	Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
title_full	Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
title_fullStr	Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
title_full_unstemmed	Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
title_sort	temperature dependence of aos thin film nano transistors for medical applications
publisher	Dove Medical Press
publishDate	2019
url	https://doaj.org/article/4d789810ddc342408763e41a64083538
work_keys_str_mv	AT huoc temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT daim temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT huy temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT zhangx temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT wangw temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT zhangh temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT jiangk temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT wangp temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT webstertj temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT guol temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications AT zhuw temperaturedependenceofaosthinfilmnanotransistorsformedicalapplications
_version_	1718398064039821312

Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications

Ejemplares similares