Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors

By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds a...

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Autores principales:	Evtodiev, Igor, Untila, Dumitru, Evtodiev, Silvia, Caraman, Iuliana, Gaşin, Petru, Dmitroglo, Liliana, Rotaru, Irina, Canţer, Valeriu
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2017
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/4e1bd016d89840789bb2b81dc8d97fa4
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spelling	oai:doaj.org-article:4e1bd016d89840789bb2b81dc8d97fa42021-11-21T11:56:50ZStructural and optical properties of composites containing AIIBVI and AIIBVI semiconductors537.311.322+539.192537-63651810-648Xhttps://doaj.org/article/4e1bd016d89840789bb2b81dc8d97fa42017-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2017/article/71492https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.Evtodiev, IgorUntila, DumitruEvtodiev, SilviaCaraman, IulianaGaşin, PetruDmitroglo, LilianaRotaru, IrinaCanţer, ValeriuD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 16, Iss 3-4, Pp 219-226 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Evtodiev, Igor Untila, Dumitru Evtodiev, Silvia Caraman, Iuliana Gaşin, Petru Dmitroglo, Liliana Rotaru, Irina Canţer, Valeriu Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors
description	By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.
format	article
author	Evtodiev, Igor Untila, Dumitru Evtodiev, Silvia Caraman, Iuliana Gaşin, Petru Dmitroglo, Liliana Rotaru, Irina Canţer, Valeriu
author_facet	Evtodiev, Igor Untila, Dumitru Evtodiev, Silvia Caraman, Iuliana Gaşin, Petru Dmitroglo, Liliana Rotaru, Irina Canţer, Valeriu
author_sort	Evtodiev, Igor
title	Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors
title_short	Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors
title_full	Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors
title_fullStr	Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors
title_full_unstemmed	Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors
title_sort	structural and optical properties of composites containing aiibvi and aiibvi semiconductors
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2017
url	https://doaj.org/article/4e1bd016d89840789bb2b81dc8d97fa4
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Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors

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