Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors
By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds a...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/4e1bd016d89840789bb2b81dc8d97fa4 |
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