Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device

Abstract A time-decay resistive switching memory using a 3D vertical Pt/Ta2O5−x/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usu...

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Main Authors:	Qi Wang, Deyan He
Format:	article
Language:	EN
Published:	Nature Portfolio 2017
Subjects:	Medicine R Science Q
Online Access:	https://doaj.org/article/4e5354dd1f234ca08cbf8fb6d8aa9caa
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spelling	oai:doaj.org-article:4e5354dd1f234ca08cbf8fb6d8aa9caa2021-12-02T15:05:09ZTime-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device10.1038/s41598-017-00985-02045-2322https://doaj.org/article/4e5354dd1f234ca08cbf8fb6d8aa9caa2017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00985-0https://doaj.org/toc/2045-2322Abstract A time-decay resistive switching memory using a 3D vertical Pt/Ta2O5−x/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usually form a conductive filament connect two electrodes, a weak conductive filament was formed from bottom electrode W to near top electrode Pt. The memory can be recovered with a time scale when the electrical stimulation is removed. However, different decay behaviors were observed in one decay curve, including rapid decay and slow decay processes. This can be a good simulation of different stages of forgetting. By a combination of the current decay fitting and the conductive analysis, the rapid decay and slow decay processes correspond to ion diffusion and electron detrapping, respectively.Qi WangDeyan HeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Qi Wang Deyan He Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
description	Abstract A time-decay resistive switching memory using a 3D vertical Pt/Ta2O5−x/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usually form a conductive filament connect two electrodes, a weak conductive filament was formed from bottom electrode W to near top electrode Pt. The memory can be recovered with a time scale when the electrical stimulation is removed. However, different decay behaviors were observed in one decay curve, including rapid decay and slow decay processes. This can be a good simulation of different stages of forgetting. By a combination of the current decay fitting and the conductive analysis, the rapid decay and slow decay processes correspond to ion diffusion and electron detrapping, respectively.
format	article
author	Qi Wang Deyan He
author_facet	Qi Wang Deyan He
author_sort	Qi Wang
title	Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_short	Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_full	Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_fullStr	Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_full_unstemmed	Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_sort	time-decay memristive behavior and diffusive dynamics in one forget process operated by a 3d vertical pt/ta2o5−x/w device
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4e5354dd1f234ca08cbf8fb6d8aa9caa
work_keys_str_mv	AT qiwang timedecaymemristivebehavioranddiffusivedynamicsinoneforgetprocessoperatedbya3dverticalptta2o5xwdevice AT deyanhe timedecaymemristivebehavioranddiffusivedynamicsinoneforgetprocessoperatedbya3dverticalptta2o5xwdevice
_version_	1718388889721241600

Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device

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