Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device

Abstract A time-decay resistive switching memory using a 3D vertical Pt/Ta2O5−x/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usu...

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Autores principales: Qi Wang, Deyan He
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/4e5354dd1f234ca08cbf8fb6d8aa9caa
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spelling oai:doaj.org-article:4e5354dd1f234ca08cbf8fb6d8aa9caa2021-12-02T15:05:09ZTime-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device10.1038/s41598-017-00985-02045-2322https://doaj.org/article/4e5354dd1f234ca08cbf8fb6d8aa9caa2017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00985-0https://doaj.org/toc/2045-2322Abstract A time-decay resistive switching memory using a 3D vertical Pt/Ta2O5−x/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usually form a conductive filament connect two electrodes, a weak conductive filament was formed from bottom electrode W to near top electrode Pt. The memory can be recovered with a time scale when the electrical stimulation is removed. However, different decay behaviors were observed in one decay curve, including rapid decay and slow decay processes. This can be a good simulation of different stages of forgetting. By a combination of the current decay fitting and the conductive analysis, the rapid decay and slow decay processes correspond to ion diffusion and electron detrapping, respectively.Qi WangDeyan HeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Qi Wang
Deyan He
Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
description Abstract A time-decay resistive switching memory using a 3D vertical Pt/Ta2O5−x/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usually form a conductive filament connect two electrodes, a weak conductive filament was formed from bottom electrode W to near top electrode Pt. The memory can be recovered with a time scale when the electrical stimulation is removed. However, different decay behaviors were observed in one decay curve, including rapid decay and slow decay processes. This can be a good simulation of different stages of forgetting. By a combination of the current decay fitting and the conductive analysis, the rapid decay and slow decay processes correspond to ion diffusion and electron detrapping, respectively.
format article
author Qi Wang
Deyan He
author_facet Qi Wang
Deyan He
author_sort Qi Wang
title Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_short Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_full Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_fullStr Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_full_unstemmed Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
title_sort time-decay memristive behavior and diffusive dynamics in one forget process operated by a 3d vertical pt/ta2o5−x/w device
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/4e5354dd1f234ca08cbf8fb6d8aa9caa
work_keys_str_mv AT qiwang timedecaymemristivebehavioranddiffusivedynamicsinoneforgetprocessoperatedbya3dverticalptta2o5xwdevice
AT deyanhe timedecaymemristivebehavioranddiffusivedynamicsinoneforgetprocessoperatedbya3dverticalptta2o5xwdevice
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