Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra

Abstract We report a phosphor-free white light-emitting diodes (LED) realized by the monolithic integration of In0.18Ga0.82N/GaN (438 nm, blue), In0.26Ga0.74N/GaN (513 nm, green), and In0.45Ga0.55N/In0.13Ga0.87N (602 nm, red) quantum wells (QWs) as an active medium. The QWs corresponding to blue and...

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Autores principales:	Kwanjae Lee, Ilgyu Choi, Cheul-Ro Lee, Tae-Hoon Chung, Yoon Seok Kim, Kwang-Un Jeong, Dong Chul Chung, Jin Soo Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4e6f366dd38f43b189baa44397c0d2c4
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spelling	oai:doaj.org-article:4e6f366dd38f43b189baa44397c0d2c42021-12-02T15:05:58ZFlower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra10.1038/s41598-017-07808-22045-2322https://doaj.org/article/4e6f366dd38f43b189baa44397c0d2c42017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07808-2https://doaj.org/toc/2045-2322Abstract We report a phosphor-free white light-emitting diodes (LED) realized by the monolithic integration of In0.18Ga0.82N/GaN (438 nm, blue), In0.26Ga0.74N/GaN (513 nm, green), and In0.45Ga0.55N/In0.13Ga0.87N (602 nm, red) quantum wells (QWs) as an active medium. The QWs corresponding to blue and green light were grown using a conventional growth mode. For the red spectral emission, five-stacked In0.45Ga0.55N/In0.13Ga0.87N QWs were realized by the so-called Ga-flow-interruption (Ga-FI) technique, wherein the Ga supply was periodically interrupted during the deposition of In0.3Ga0.7N to form an In0.45Ga0.55N well. The vertical and lateral distributions of the three different light emissions were investigated by fluorescence microscope (FM) images. The FM image measured at a focal point in the middle of the n-GaN cladding layer for the red-emitting LED shows that light emissions with flower-like patterns with six petals are periodically observed. The chromaticity coordinates of the electroluminescence spectrum for the white LEDs at an injection current of 80 mA are measured to be (0.316, 0.312), which is close to ideal white light. In contrast with phosphor-free white-light-emitting devices based on nanostructures, our white light device exhibits a mixture of three independent wavelengths by monolithically grown InGaN-based QWs, thus demonstrating a more facile technique to obtain white LEDs.Kwanjae LeeIlgyu ChoiCheul-Ro LeeTae-Hoon ChungYoon Seok KimKwang-Un JeongDong Chul ChungJin Soo KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Kwanjae Lee Ilgyu Choi Cheul-Ro Lee Tae-Hoon Chung Yoon Seok Kim Kwang-Un Jeong Dong Chul Chung Jin Soo Kim Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra
description	Abstract We report a phosphor-free white light-emitting diodes (LED) realized by the monolithic integration of In0.18Ga0.82N/GaN (438 nm, blue), In0.26Ga0.74N/GaN (513 nm, green), and In0.45Ga0.55N/In0.13Ga0.87N (602 nm, red) quantum wells (QWs) as an active medium. The QWs corresponding to blue and green light were grown using a conventional growth mode. For the red spectral emission, five-stacked In0.45Ga0.55N/In0.13Ga0.87N QWs were realized by the so-called Ga-flow-interruption (Ga-FI) technique, wherein the Ga supply was periodically interrupted during the deposition of In0.3Ga0.7N to form an In0.45Ga0.55N well. The vertical and lateral distributions of the three different light emissions were investigated by fluorescence microscope (FM) images. The FM image measured at a focal point in the middle of the n-GaN cladding layer for the red-emitting LED shows that light emissions with flower-like patterns with six petals are periodically observed. The chromaticity coordinates of the electroluminescence spectrum for the white LEDs at an injection current of 80 mA are measured to be (0.316, 0.312), which is close to ideal white light. In contrast with phosphor-free white-light-emitting devices based on nanostructures, our white light device exhibits a mixture of three independent wavelengths by monolithically grown InGaN-based QWs, thus demonstrating a more facile technique to obtain white LEDs.
format	article
author	Kwanjae Lee Ilgyu Choi Cheul-Ro Lee Tae-Hoon Chung Yoon Seok Kim Kwang-Un Jeong Dong Chul Chung Jin Soo Kim
author_facet	Kwanjae Lee Ilgyu Choi Cheul-Ro Lee Tae-Hoon Chung Yoon Seok Kim Kwang-Un Jeong Dong Chul Chung Jin Soo Kim
author_sort	Kwanjae Lee
title	Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra
title_short	Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra
title_full	Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra
title_fullStr	Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra
title_full_unstemmed	Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra
title_sort	flower-like internal emission distribution of leds with monolithic integration of ingan-based quantum wells emitting narrow blue, green, and red spectra
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4e6f366dd38f43b189baa44397c0d2c4
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Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra

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