Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface

Engineering the interaction between spin and charge is important for the creation of spintronics devices. Here, the authors show that the Rashba effect at a single crystalline Fe/Ge(111) interface produces enhanced spin-charge conversion, which could help develop a spin field-effect-transistor.

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Detalles Bibliográficos
Autores principales: S. Oyarzún, A. K. Nandy, F. Rortais, J.-C. Rojas-Sánchez, M.-T. Dau, P. Noël, P. Laczkowski, S. Pouget, H. Okuno, L. Vila, C. Vergnaud, C. Beigné, A. Marty, J.-P. Attané, S. Gambarelli, J.-M. George, H. Jaffrès, S. Blügel, M. Jamet
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/4e7a0d52402845b5b59c24b5655ea43c
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Sumario:Engineering the interaction between spin and charge is important for the creation of spintronics devices. Here, the authors show that the Rashba effect at a single crystalline Fe/Ge(111) interface produces enhanced spin-charge conversion, which could help develop a spin field-effect-transistor.