Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material

Abstract High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE ) of 345 cm2/Vs, small sub-threshold s...

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Autores principales:	Cheng Wei Shih, Albert Chin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4e92c6b22aef4247b4f672579fed4d0d
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spelling	oai:doaj.org-article:4e92c6b22aef4247b4f672579fed4d0d2021-12-02T15:06:13ZRemarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material10.1038/s41598-017-01231-32045-2322https://doaj.org/article/4e92c6b22aef4247b4f672579fed4d0d2017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01231-3https://doaj.org/toc/2045-2322Abstract High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE ) of 345 cm2/Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I ON /I OFF ) of 7 × 106, and a low drain-voltage (VD) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I ON and I OFF . From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.Cheng Wei ShihAlbert ChinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Cheng Wei Shih Albert Chin Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material
description	Abstract High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE ) of 345 cm2/Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I ON /I OFF ) of 7 × 106, and a low drain-voltage (VD) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I ON and I OFF . From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.
format	article
author	Cheng Wei Shih Albert Chin
author_facet	Cheng Wei Shih Albert Chin
author_sort	Cheng Wei Shih
title	Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material
title_short	Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material
title_full	Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material
title_fullStr	Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material
title_full_unstemmed	Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material
title_sort	remarkably high mobility thin-film transistor on flexible substrate by novel passivation material
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4e92c6b22aef4247b4f672579fed4d0d
work_keys_str_mv	AT chengweishih remarkablyhighmobilitythinfilmtransistoronflexiblesubstratebynovelpassivationmaterial AT albertchin remarkablyhighmobilitythinfilmtransistoronflexiblesubstratebynovelpassivationmaterial
_version_	1718388510365319168

Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material

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