Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material

Abstract High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE ) of 345 cm2/Vs, small sub-threshold s...

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Autores principales: Cheng Wei Shih, Albert Chin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/4e92c6b22aef4247b4f672579fed4d0d
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