Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation

Abstract Although solution-processed Cu(In,Ga)(S,Se)2 (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work, we present a near-infrared photodetector function...

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Autores principales:	Joo-Hyun Kim, Hyemi Han, Min Kyu Kim, Jongtae Ahn, Do Kyung Hwang, Tae Joo Shin, Byoung Koun Min, Jung Ah Lim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4eb48d231fad4ad0b718aa5d963f6794
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spelling	oai:doaj.org-article:4eb48d231fad4ad0b718aa5d963f67942021-12-02T14:37:39ZSolution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation10.1038/s41598-021-87359-92045-2322https://doaj.org/article/4eb48d231fad4ad0b718aa5d963f67942021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87359-9https://doaj.org/toc/2045-2322Abstract Although solution-processed Cu(In,Ga)(S,Se)2 (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work, we present a near-infrared photodetector functioning at 980 nm based on solution-processed CIGS with a potassium-induced bandgap grading structure and chalcopyrite grain growth. The incorporation of potassium in the CIGS film promotes Se uptake in the bulk of the film during the chalcogenization process, resulting in a bandgap grading structure with a wide space charge region that allows improved light absorption in the near-infrared region and charge carrier separation. Also, increasing the Se penetration in the potassium-incorporated CIGS film leads to the enhancement of chalcopyrite crystalline grain growth, increasing charge carrier mobility. Under the reverse bias condition, associated with hole tunneling from the ZnO interlayer, the increasing carrier mobility of potassium-incorporated CIGS photodetector improved photosensitivity and particularly external quantum efficiency more than 100% at low light intensity. The responsivity and detectivity of the potassium-incorporated CIGS photodetector reach 1.87 A W−1 and 6.45 $$\times$$ × 1010 Jones, respectively, and the − 3 dB bandwidth of the device extends to 10.5 kHz under 980 nm near-infrared light.Joo-Hyun KimHyemi HanMin Kyu KimJongtae AhnDo Kyung HwangTae Joo ShinByoung Koun MinJung Ah LimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Joo-Hyun Kim Hyemi Han Min Kyu Kim Jongtae Ahn Do Kyung Hwang Tae Joo Shin Byoung Koun Min Jung Ah Lim Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation
description	Abstract Although solution-processed Cu(In,Ga)(S,Se)2 (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work, we present a near-infrared photodetector functioning at 980 nm based on solution-processed CIGS with a potassium-induced bandgap grading structure and chalcopyrite grain growth. The incorporation of potassium in the CIGS film promotes Se uptake in the bulk of the film during the chalcogenization process, resulting in a bandgap grading structure with a wide space charge region that allows improved light absorption in the near-infrared region and charge carrier separation. Also, increasing the Se penetration in the potassium-incorporated CIGS film leads to the enhancement of chalcopyrite crystalline grain growth, increasing charge carrier mobility. Under the reverse bias condition, associated with hole tunneling from the ZnO interlayer, the increasing carrier mobility of potassium-incorporated CIGS photodetector improved photosensitivity and particularly external quantum efficiency more than 100% at low light intensity. The responsivity and detectivity of the potassium-incorporated CIGS photodetector reach 1.87 A W−1 and 6.45 $$\times$$ × 1010 Jones, respectively, and the − 3 dB bandwidth of the device extends to 10.5 kHz under 980 nm near-infrared light.
format	article
author	Joo-Hyun Kim Hyemi Han Min Kyu Kim Jongtae Ahn Do Kyung Hwang Tae Joo Shin Byoung Koun Min Jung Ah Lim
author_facet	Joo-Hyun Kim Hyemi Han Min Kyu Kim Jongtae Ahn Do Kyung Hwang Tae Joo Shin Byoung Koun Min Jung Ah Lim
author_sort	Joo-Hyun Kim
title	Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation
title_short	Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation
title_full	Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation
title_fullStr	Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation
title_full_unstemmed	Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation
title_sort	solution-processed near-infrared cu(in,ga)(s,se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/4eb48d231fad4ad0b718aa5d963f6794
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Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation

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