Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

Organic electronics: Conjugated polymer doped by fluoride anion Fluoride anions have been confirmed to be capable of n-dope the organic semiconductors and thus provide more possibilities in molecular doping. A collaborative team led by Martin Heeney from Imperial College London shows an effective n-...

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Autores principales:	Yang Han, Zhuping Fei, Yen-Hung Lin, Jaime Martin, Floriana Tuna, Thomas D. Anthopoulos, Martin Heeney
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/4ee6561fe41f4b7abb4e9aadd2683bfa
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spelling	oai:doaj.org-article:4ee6561fe41f4b7abb4e9aadd2683bfa2021-12-02T14:18:12ZAnion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors10.1038/s41528-018-0024-22397-4621https://doaj.org/article/4ee6561fe41f4b7abb4e9aadd2683bfa2018-04-01T00:00:00Zhttps://doi.org/10.1038/s41528-018-0024-2https://doaj.org/toc/2397-4621Organic electronics: Conjugated polymer doped by fluoride anion Fluoride anions have been confirmed to be capable of n-dope the organic semiconductors and thus provide more possibilities in molecular doping. A collaborative team led by Martin Heeney from Imperial College London shows an effective n-doping effect in P(NDI2OD-T2) polymer by the Lewis basic anion fluoride. The formation of radical anions is confirmed by electron paramagnetic resonance and absorption spectroscopy. Furthermore, the doping effect is verified with the improved characteristics of the thin film transistors such as reduced injection barrier, contact resistance and hysteresis. This anion doping method can be generalised to other halide anions, thus overcoming the problem of poor stability for the conventional ‘charge transfer’ doping. It opens up new opportunities for simple solution processed doping strategies and optimisation of organic electronic devices.Yang HanZhuping FeiYen-Hung LinJaime MartinFloriana TunaThomas D. AnthopoulosMartin HeeneyNature PortfolioarticleElectronicsTK7800-8360Materials of engineering and construction. Mechanics of materialsTA401-492ENnpj Flexible Electronics, Vol 2, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492 Yang Han Zhuping Fei Yen-Hung Lin Jaime Martin Floriana Tuna Thomas D. Anthopoulos Martin Heeney Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
description	Organic electronics: Conjugated polymer doped by fluoride anion Fluoride anions have been confirmed to be capable of n-dope the organic semiconductors and thus provide more possibilities in molecular doping. A collaborative team led by Martin Heeney from Imperial College London shows an effective n-doping effect in P(NDI2OD-T2) polymer by the Lewis basic anion fluoride. The formation of radical anions is confirmed by electron paramagnetic resonance and absorption spectroscopy. Furthermore, the doping effect is verified with the improved characteristics of the thin film transistors such as reduced injection barrier, contact resistance and hysteresis. This anion doping method can be generalised to other halide anions, thus overcoming the problem of poor stability for the conventional ‘charge transfer’ doping. It opens up new opportunities for simple solution processed doping strategies and optimisation of organic electronic devices.
format	article
author	Yang Han Zhuping Fei Yen-Hung Lin Jaime Martin Floriana Tuna Thomas D. Anthopoulos Martin Heeney
author_facet	Yang Han Zhuping Fei Yen-Hung Lin Jaime Martin Floriana Tuna Thomas D. Anthopoulos Martin Heeney
author_sort	Yang Han
title	Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
title_short	Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
title_full	Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
title_fullStr	Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
title_full_unstemmed	Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
title_sort	anion-induced n-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/4ee6561fe41f4b7abb4e9aadd2683bfa
work_keys_str_mv	AT yanghan anioninducedndopingofnaphthalenediimidepolymersemiconductorinorganicthinfilmtransistors AT zhupingfei anioninducedndopingofnaphthalenediimidepolymersemiconductorinorganicthinfilmtransistors AT yenhunglin anioninducedndopingofnaphthalenediimidepolymersemiconductorinorganicthinfilmtransistors AT jaimemartin anioninducedndopingofnaphthalenediimidepolymersemiconductorinorganicthinfilmtransistors AT florianatuna anioninducedndopingofnaphthalenediimidepolymersemiconductorinorganicthinfilmtransistors AT thomasdanthopoulos anioninducedndopingofnaphthalenediimidepolymersemiconductorinorganicthinfilmtransistors AT martinheeney anioninducedndopingofnaphthalenediimidepolymersemiconductorinorganicthinfilmtransistors
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Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

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