Quenching Statistics of Silicon Single Photon Avalanche Diodes

The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The coupling of Poisson and Boltzmann transport equations allows us to go beyond the analysis of avalanche breakdown and its timing and to extend the...

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Autores principales:	Thibauld Cazimajou, Marco Pala, Jerome Saint-Martin, Remi Helleboid, Jeremy Grebot, Denis Rideau, Philippe Dollfus
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Avalanche breakdown Monte Carlo methods avalanche photodiodes Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/4f43bde47a5d4c2a88d31a2dd2793d90
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spelling	oai:doaj.org-article:4f43bde47a5d4c2a88d31a2dd2793d902021-12-01T00:00:22ZQuenching Statistics of Silicon Single Photon Avalanche Diodes2168-673410.1109/JEDS.2021.3127013https://doaj.org/article/4f43bde47a5d4c2a88d31a2dd2793d902021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9610136/https://doaj.org/toc/2168-6734The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The coupling of Poisson and Boltzmann transport equations allows us to go beyond the analysis of avalanche breakdown and its timing and to extend the investigation to the quenching of the photodetector circuit. We find out that the quenching of SPADs is probabilistic and strongly depends on the surrounding circuit, in particular on the so-called quenching resistance. Independently of the SPAD deadtime, it appears that the extinction time needed to suppress any avalanche event may vary over a very large range.Thibauld CazimajouMarco PalaJerome Saint-MartinRemi HelleboidJeremy GrebotDenis RideauPhilippe DollfusIEEEarticleAvalanche breakdownMonte Carlo methodsavalanche photodiodesElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1098-1102 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Avalanche breakdown Monte Carlo methods avalanche photodiodes Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Avalanche breakdown Monte Carlo methods avalanche photodiodes Electrical engineering. Electronics. Nuclear engineering TK1-9971 Thibauld Cazimajou Marco Pala Jerome Saint-Martin Remi Helleboid Jeremy Grebot Denis Rideau Philippe Dollfus Quenching Statistics of Silicon Single Photon Avalanche Diodes
description	The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The coupling of Poisson and Boltzmann transport equations allows us to go beyond the analysis of avalanche breakdown and its timing and to extend the investigation to the quenching of the photodetector circuit. We find out that the quenching of SPADs is probabilistic and strongly depends on the surrounding circuit, in particular on the so-called quenching resistance. Independently of the SPAD deadtime, it appears that the extinction time needed to suppress any avalanche event may vary over a very large range.
format	article
author	Thibauld Cazimajou Marco Pala Jerome Saint-Martin Remi Helleboid Jeremy Grebot Denis Rideau Philippe Dollfus
author_facet	Thibauld Cazimajou Marco Pala Jerome Saint-Martin Remi Helleboid Jeremy Grebot Denis Rideau Philippe Dollfus
author_sort	Thibauld Cazimajou
title	Quenching Statistics of Silicon Single Photon Avalanche Diodes
title_short	Quenching Statistics of Silicon Single Photon Avalanche Diodes
title_full	Quenching Statistics of Silicon Single Photon Avalanche Diodes
title_fullStr	Quenching Statistics of Silicon Single Photon Avalanche Diodes
title_full_unstemmed	Quenching Statistics of Silicon Single Photon Avalanche Diodes
title_sort	quenching statistics of silicon single photon avalanche diodes
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/4f43bde47a5d4c2a88d31a2dd2793d90
work_keys_str_mv	AT thibauldcazimajou quenchingstatisticsofsiliconsinglephotonavalanchediodes AT marcopala quenchingstatisticsofsiliconsinglephotonavalanchediodes AT jeromesaintmartin quenchingstatisticsofsiliconsinglephotonavalanchediodes AT remihelleboid quenchingstatisticsofsiliconsinglephotonavalanchediodes AT jeremygrebot quenchingstatisticsofsiliconsinglephotonavalanchediodes AT denisrideau quenchingstatisticsofsiliconsinglephotonavalanchediodes AT philippedollfus quenchingstatisticsofsiliconsinglephotonavalanchediodes
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Quenching Statistics of Silicon Single Photon Avalanche Diodes

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