Quenching Statistics of Silicon Single Photon Avalanche Diodes
The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The coupling of Poisson and Boltzmann transport equations allows us to go beyond the analysis of avalanche breakdown and its timing and to extend the...
Saved in:
Main Authors: | Thibauld Cazimajou, Marco Pala, Jerome Saint-Martin, Remi Helleboid, Jeremy Grebot, Denis Rideau, Philippe Dollfus |
---|---|
Format: | article |
Language: | EN |
Published: |
IEEE
2021
|
Subjects: | |
Online Access: | https://doaj.org/article/4f43bde47a5d4c2a88d31a2dd2793d90 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Bit Error Performance of APD and SPAD Receivers in Optical Wireless Communication
by: Hiwa Mahmoudi, et al.
Published: (2021) -
Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
by: Wei Jiang, et al.
Published: (2022) -
Evolution of Parinacota volcano, Central Andes, Northern Chile
by: Clavero R.,Jorge E., et al.
Published: (2004) -
Secondary scintillation yield in pure krypton
by: R.D.P. Mano, et al.
Published: (2022) -
A Physics Based Unified Circuit Model for Single Photon and Analog Detector
by: Mohammad Abu Raihan Miah, et al.
Published: (2021)