Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures

In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that opti...

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Autores principales:	Chibuzo Onwukaeme, Han-Youl Ryu
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	laser diode blue laser high-power laser InGaN nitride semiconductor Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/4f52d2a0aed44737ae0565671979392e
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spelling	oai:doaj.org-article:4f52d2a0aed44737ae0565671979392e2021-11-25T17:18:24ZInvestigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures10.3390/cryst111113352073-4352https://doaj.org/article/4f52d2a0aed44737ae0565671979392e2021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1335https://doaj.org/toc/2073-4352In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that optimization of the Mg doping concentration is required. In this study, we systematically investigated the effect of the Mg doping concentration in the AlGaN electron-blocking layer (EBL) and the AlGaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency (WPE) of InGaN blue LD structures using numerical simulations. In the optimization of the EBL, an Al composition of 20% and an Mg doping concentration of 3 × 10<sup>19</sup> cm<sup>−3</sup> exhibited the best performance, with negligible electron leakage and a high WPE. The optimum Mg concentration of the p-AlGaN cladding layer was found to be ~1.5 × 10<sup>19</sup> cm<sup>−3</sup>, where the maximum WPE of 38.6% was obtained for a blue LD with a threshold current density of 1 kA/cm<sup>2</sup> and a slope efficiency of 2.1 W/A.Chibuzo OnwukaemeHan-Youl RyuMDPI AGarticlelaser diodeblue laserhigh-power laserInGaNnitride semiconductorCrystallographyQD901-999ENCrystals, Vol 11, Iss 1335, p 1335 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	laser diode blue laser high-power laser InGaN nitride semiconductor Crystallography QD901-999
spellingShingle	laser diode blue laser high-power laser InGaN nitride semiconductor Crystallography QD901-999 Chibuzo Onwukaeme Han-Youl Ryu Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
description	In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that optimization of the Mg doping concentration is required. In this study, we systematically investigated the effect of the Mg doping concentration in the AlGaN electron-blocking layer (EBL) and the AlGaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency (WPE) of InGaN blue LD structures using numerical simulations. In the optimization of the EBL, an Al composition of 20% and an Mg doping concentration of 3 × 10<sup>19</sup> cm<sup>−3</sup> exhibited the best performance, with negligible electron leakage and a high WPE. The optimum Mg concentration of the p-AlGaN cladding layer was found to be ~1.5 × 10<sup>19</sup> cm<sup>−3</sup>, where the maximum WPE of 38.6% was obtained for a blue LD with a threshold current density of 1 kA/cm<sup>2</sup> and a slope efficiency of 2.1 W/A.
format	article
author	Chibuzo Onwukaeme Han-Youl Ryu
author_facet	Chibuzo Onwukaeme Han-Youl Ryu
author_sort	Chibuzo Onwukaeme
title	Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
title_short	Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
title_full	Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
title_fullStr	Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
title_full_unstemmed	Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
title_sort	investigation of the optimum mg doping concentration in p-type-doped layers of ingan blue laser diode structures
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/4f52d2a0aed44737ae0565671979392e
work_keys_str_mv	AT chibuzoonwukaeme investigationoftheoptimummgdopingconcentrationinptypedopedlayersofinganbluelaserdiodestructures AT hanyoulryu investigationoftheoptimummgdopingconcentrationinptypedopedlayersofinganbluelaserdiodestructures
_version_	1718412528164274176

Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures

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