Cita APA (7a ed.)

Pai, K., & Lin, C. (2021). Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation. MDPI AG.

Cita Chicago Style (17a ed.)

Pai, Kai-Jun, y Chang-Hua Lin. Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 Nm Laser Diode for a Short-Pulsed Rising Current Simulation. MDPI AG, 2021.

Cita MLA (8a ed.)

Pai, Kai-Jun, y Chang-Hua Lin. Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 Nm Laser Diode for a Short-Pulsed Rising Current Simulation. MDPI AG, 2021.