Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation

In this paper, a dynamic operational linear regulator (DOLR) based on a GaN high-electron-mobility transistor (HEMT) and wide-bandwidth operational amplifier was developed and implemented. The driving current could be regulated and controlled by the DOLR for 632 nm laser diodes. The constant-current...

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Autores principales:	Kai-Jun Pai, Chang-Hua Lin
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	linear regulator GaN laser diode continuous-wave laser short-pulsed laser Chemical technology TP1-1185 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/4f720c0b247e4515a5faf4d36b2a74eb
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spelling	oai:doaj.org-article:4f720c0b247e4515a5faf4d36b2a74eb2021-11-25T18:51:06ZEquivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation10.3390/pr91119752227-9717https://doaj.org/article/4f720c0b247e4515a5faf4d36b2a74eb2021-11-01T00:00:00Zhttps://www.mdpi.com/2227-9717/9/11/1975https://doaj.org/toc/2227-9717In this paper, a dynamic operational linear regulator (DOLR) based on a GaN high-electron-mobility transistor (HEMT) and wide-bandwidth operational amplifier was developed and implemented. The driving current could be regulated and controlled by the DOLR for 632 nm laser diodes. The constant-current mode for the continuous-wave laser and the pulse-width modulation (PWM) mode for the short-pulsed laser were realizable using this DOLR. This study focused on the rising-edge time change on the laser driving current when the DOLR was operated under the high-frequency PWM mode, because the parasitic components on the GaN HEMT, laser diodes, printed circuit board, and power wires could influence the current’s dynamic behavior. Therefore, the equivalent circuit models of the laser diode and GaN HEMT were applied to establish a DOLR simulation circuit in order to observe the rising-edge time change on the laser driving current. A DOLR prototype was achieved, and so experimental waveform measurements could be implemented to verify the DOLR simulation and operation.Kai-Jun PaiChang-Hua LinMDPI AGarticlelinear regulatorGaNlaser diodecontinuous-wave lasershort-pulsed laserChemical technologyTP1-1185ChemistryQD1-999ENProcesses, Vol 9, Iss 1975, p 1975 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	linear regulator GaN laser diode continuous-wave laser short-pulsed laser Chemical technology TP1-1185 Chemistry QD1-999
spellingShingle	linear regulator GaN laser diode continuous-wave laser short-pulsed laser Chemical technology TP1-1185 Chemistry QD1-999 Kai-Jun Pai Chang-Hua Lin Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
description	In this paper, a dynamic operational linear regulator (DOLR) based on a GaN high-electron-mobility transistor (HEMT) and wide-bandwidth operational amplifier was developed and implemented. The driving current could be regulated and controlled by the DOLR for 632 nm laser diodes. The constant-current mode for the continuous-wave laser and the pulse-width modulation (PWM) mode for the short-pulsed laser were realizable using this DOLR. This study focused on the rising-edge time change on the laser driving current when the DOLR was operated under the high-frequency PWM mode, because the parasitic components on the GaN HEMT, laser diodes, printed circuit board, and power wires could influence the current’s dynamic behavior. Therefore, the equivalent circuit models of the laser diode and GaN HEMT were applied to establish a DOLR simulation circuit in order to observe the rising-edge time change on the laser driving current. A DOLR prototype was achieved, and so experimental waveform measurements could be implemented to verify the DOLR simulation and operation.
format	article
author	Kai-Jun Pai Chang-Hua Lin
author_facet	Kai-Jun Pai Chang-Hua Lin
author_sort	Kai-Jun Pai
title	Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
title_short	Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
title_full	Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
title_fullStr	Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
title_full_unstemmed	Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
title_sort	equivalent circuit establishments of a gan high-electron-mobility transistor and 635 nm laser diode for a short-pulsed rising current simulation
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/4f720c0b247e4515a5faf4d36b2a74eb
work_keys_str_mv	AT kaijunpai equivalentcircuitestablishmentsofaganhighelectronmobilitytransistorand635nmlaserdiodeforashortpulsedrisingcurrentsimulation AT changhualin equivalentcircuitestablishmentsofaganhighelectronmobilitytransistorand635nmlaserdiodeforashortpulsedrisingcurrentsimulation
_version_	1718410645894856704

Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation

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