Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
In this paper, a dynamic operational linear regulator (DOLR) based on a GaN high-electron-mobility transistor (HEMT) and wide-bandwidth operational amplifier was developed and implemented. The driving current could be regulated and controlled by the DOLR for 632 nm laser diodes. The constant-current...
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| Main Authors: | , |
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| Format: | article |
| Language: | EN |
| Published: |
MDPI AG
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/4f720c0b247e4515a5faf4d36b2a74eb |
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