Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet

Abstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fi...

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Autores principales:	Cui Zhang, Prabesh Dulal, Bethanie J. H. Stadler, David C. Hutchings
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4f79a6f4b25448c5bc18011b34a92ee9
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spelling	oai:doaj.org-article:4f79a6f4b25448c5bc18011b34a92ee92021-12-02T12:32:58ZMonolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet10.1038/s41598-017-06043-z2045-2322https://doaj.org/article/4f79a6f4b25448c5bc18011b34a92ee92017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06043-zhttps://doaj.org/toc/2045-2322Abstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB.Cui ZhangPrabesh DulalBethanie J. H. StadlerDavid C. HutchingsNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Cui Zhang Prabesh Dulal Bethanie J. H. Stadler David C. Hutchings Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
description	Abstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB.
format	article
author	Cui Zhang Prabesh Dulal Bethanie J. H. Stadler David C. Hutchings
author_facet	Cui Zhang Prabesh Dulal Bethanie J. H. Stadler David C. Hutchings
author_sort	Cui Zhang
title	Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_short	Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_full	Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_fullStr	Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_full_unstemmed	Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_sort	monolithically-integrated te-mode 1d silicon-on-insulator isolators using seedlayer-free garnet
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4f79a6f4b25448c5bc18011b34a92ee9
work_keys_str_mv	AT cuizhang monolithicallyintegratedtemode1dsilicononinsulatorisolatorsusingseedlayerfreegarnet AT prabeshdulal monolithicallyintegratedtemode1dsilicononinsulatorisolatorsusingseedlayerfreegarnet AT bethaniejhstadler monolithicallyintegratedtemode1dsilicononinsulatorisolatorsusingseedlayerfreegarnet AT davidchutchings monolithicallyintegratedtemode1dsilicononinsulatorisolatorsusingseedlayerfreegarnet
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Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet

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