Design of erbium doped silicon nanocavities for single photon applications

Silicon-based quantum communication technologies are becoming a factual reality. However, the challenges related to an earth-space unifying technology are several, and nowadays an integrated source compatible with the CMOS technology is still missing. Here we present the design of a weak photon sour...

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Autores principales:	Di Giancamillo Matteo, Biagioni Paolo, Sorianello Vito, Prati Enrico
Formato:	article
Lenguaje:	EN
Publicado:	EDP Sciences 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/4fcfb0080a314c21becf398f9382408a
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id	oai:doaj.org-article:4fcfb0080a314c21becf398f9382408a
record_format	dspace
spelling	oai:doaj.org-article:4fcfb0080a314c21becf398f9382408a2021-12-02T17:12:51ZDesign of erbium doped silicon nanocavities for single photon applications2100-014X10.1051/epjconf/202125504001https://doaj.org/article/4fcfb0080a314c21becf398f9382408a2021-01-01T00:00:00Zhttps://www.epj-conferences.org/articles/epjconf/pdf/2021/09/epjconf_eosam2021_04001.pdfhttps://doaj.org/toc/2100-014XSilicon-based quantum communication technologies are becoming a factual reality. However, the challenges related to an earth-space unifying technology are several, and nowadays an integrated source compatible with the CMOS technology is still missing. Here we present the design of a weak photon source consisting of a LED able to emit directly into the optical circuit and obtained through the doping of a portion of a silicon waveguide with ErOx complexes. To enhance the radiative emission, the source is placed inside a resonant cavity delimited by two waveguide Bragg mirrors. A study on the performance of the device is carried out as a function of different parameters, such as the geometry of the cavity and of the contacts used to electrically excite the defects, the doping level, and the characteristics of the mirrors. We design a prototype that guarantees a Purcell factor in the order of tens, emitting ideally 107-108 photons per second. The simulations provide a promising ground to further develop fully integrated single photon sources in silicon photonic circuits.Di Giancamillo MatteoBiagioni PaoloSorianello VitoPrati EnricoEDP SciencesarticlePhysicsQC1-999ENEPJ Web of Conferences, Vol 255, p 04001 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Di Giancamillo Matteo Biagioni Paolo Sorianello Vito Prati Enrico Design of erbium doped silicon nanocavities for single photon applications
description	Silicon-based quantum communication technologies are becoming a factual reality. However, the challenges related to an earth-space unifying technology are several, and nowadays an integrated source compatible with the CMOS technology is still missing. Here we present the design of a weak photon source consisting of a LED able to emit directly into the optical circuit and obtained through the doping of a portion of a silicon waveguide with ErOx complexes. To enhance the radiative emission, the source is placed inside a resonant cavity delimited by two waveguide Bragg mirrors. A study on the performance of the device is carried out as a function of different parameters, such as the geometry of the cavity and of the contacts used to electrically excite the defects, the doping level, and the characteristics of the mirrors. We design a prototype that guarantees a Purcell factor in the order of tens, emitting ideally 107-108 photons per second. The simulations provide a promising ground to further develop fully integrated single photon sources in silicon photonic circuits.
format	article
author	Di Giancamillo Matteo Biagioni Paolo Sorianello Vito Prati Enrico
author_facet	Di Giancamillo Matteo Biagioni Paolo Sorianello Vito Prati Enrico
author_sort	Di Giancamillo Matteo
title	Design of erbium doped silicon nanocavities for single photon applications
title_short	Design of erbium doped silicon nanocavities for single photon applications
title_full	Design of erbium doped silicon nanocavities for single photon applications
title_fullStr	Design of erbium doped silicon nanocavities for single photon applications
title_full_unstemmed	Design of erbium doped silicon nanocavities for single photon applications
title_sort	design of erbium doped silicon nanocavities for single photon applications
publisher	EDP Sciences
publishDate	2021
url	https://doaj.org/article/4fcfb0080a314c21becf398f9382408a
work_keys_str_mv	AT digiancamillomatteo designoferbiumdopedsiliconnanocavitiesforsinglephotonapplications AT biagionipaolo designoferbiumdopedsiliconnanocavitiesforsinglephotonapplications AT sorianellovito designoferbiumdopedsiliconnanocavitiesforsinglephotonapplications AT pratienrico designoferbiumdopedsiliconnanocavitiesforsinglephotonapplications
_version_	1718381377400864768

Design of erbium doped silicon nanocavities for single photon applications

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