Band insulator to Mott insulator transition in 1T-TaS2

1T-TaS2 possesses complex electronic phase behaviors in transition-metal di-chalcogenides, undergoing several charge-ordered phases before finally into an insulating state of unknown origin. Here, the authors determine its electronic and structural properties experimentally, revealing its origin.

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Autores principales: Y. D. Wang, W. L. Yao, Z. M. Xin, T. T. Han, Z. G. Wang, L. Chen, C. Cai, Yuan Li, Y. Zhang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/4fd9e970e26f43eb82eb90db9be70007
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spelling oai:doaj.org-article:4fd9e970e26f43eb82eb90db9be700072021-12-02T19:02:33ZBand insulator to Mott insulator transition in 1T-TaS210.1038/s41467-020-18040-42041-1723https://doaj.org/article/4fd9e970e26f43eb82eb90db9be700072020-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-18040-4https://doaj.org/toc/2041-17231T-TaS2 possesses complex electronic phase behaviors in transition-metal di-chalcogenides, undergoing several charge-ordered phases before finally into an insulating state of unknown origin. Here, the authors determine its electronic and structural properties experimentally, revealing its origin.Y. D. WangW. L. YaoZ. M. XinT. T. HanZ. G. WangL. ChenC. CaiYuan LiY. ZhangNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Y. D. Wang
W. L. Yao
Z. M. Xin
T. T. Han
Z. G. Wang
L. Chen
C. Cai
Yuan Li
Y. Zhang
Band insulator to Mott insulator transition in 1T-TaS2
description 1T-TaS2 possesses complex electronic phase behaviors in transition-metal di-chalcogenides, undergoing several charge-ordered phases before finally into an insulating state of unknown origin. Here, the authors determine its electronic and structural properties experimentally, revealing its origin.
format article
author Y. D. Wang
W. L. Yao
Z. M. Xin
T. T. Han
Z. G. Wang
L. Chen
C. Cai
Yuan Li
Y. Zhang
author_facet Y. D. Wang
W. L. Yao
Z. M. Xin
T. T. Han
Z. G. Wang
L. Chen
C. Cai
Yuan Li
Y. Zhang
author_sort Y. D. Wang
title Band insulator to Mott insulator transition in 1T-TaS2
title_short Band insulator to Mott insulator transition in 1T-TaS2
title_full Band insulator to Mott insulator transition in 1T-TaS2
title_fullStr Band insulator to Mott insulator transition in 1T-TaS2
title_full_unstemmed Band insulator to Mott insulator transition in 1T-TaS2
title_sort band insulator to mott insulator transition in 1t-tas2
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/4fd9e970e26f43eb82eb90db9be70007
work_keys_str_mv AT ydwang bandinsulatortomottinsulatortransitionin1ttas2
AT wlyao bandinsulatortomottinsulatortransitionin1ttas2
AT zmxin bandinsulatortomottinsulatortransitionin1ttas2
AT tthan bandinsulatortomottinsulatortransitionin1ttas2
AT zgwang bandinsulatortomottinsulatortransitionin1ttas2
AT lchen bandinsulatortomottinsulatortransitionin1ttas2
AT ccai bandinsulatortomottinsulatortransitionin1ttas2
AT yuanli bandinsulatortomottinsulatortransitionin1ttas2
AT yzhang bandinsulatortomottinsulatortransitionin1ttas2
_version_ 1718377263492235264