Design of Drain-Extended MOS Devices Using RESURF Techniques for High Switching Performance and Avalanche Reliability
The drift region of conventional drain extended NMOS (DeNMOS_C) is engineered to reduce gate charge for high performance and to enhance avalanche ruggedness for reliability in switching applications. Reduced-surface-field (RESURF) techniques, including surface implant (P-Top), split-gate...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/505780d9a5e64348bde0b9337d325815 |
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