Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

Molecular monolayer doping has been used as an enabling method for the fabrication of shallow junctions in CMOS devices. Here, Gao et al. show that an undesirable reduced ionization rate during this process can be induced by carbon defects, which electronically deactivate phosphorus dopants in silic...

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Autores principales:	Xuejiao Gao, Bin Guan, Abdelmadjid Mesli, Kaixiang Chen, Yaping Dan
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/50aa41e5e0484cee8b64606312319eb6
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spelling	oai:doaj.org-article:50aa41e5e0484cee8b64606312319eb62021-12-02T17:31:15ZDeep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers10.1038/s41467-017-02564-32041-1723https://doaj.org/article/50aa41e5e0484cee8b64606312319eb62018-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-02564-3https://doaj.org/toc/2041-1723Molecular monolayer doping has been used as an enabling method for the fabrication of shallow junctions in CMOS devices. Here, Gao et al. show that an undesirable reduced ionization rate during this process can be induced by carbon defects, which electronically deactivate phosphorus dopants in silicon.Xuejiao GaoBin GuanAbdelmadjid MesliKaixiang ChenYaping DanNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xuejiao Gao Bin Guan Abdelmadjid Mesli Kaixiang Chen Yaping Dan Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
description	Molecular monolayer doping has been used as an enabling method for the fabrication of shallow junctions in CMOS devices. Here, Gao et al. show that an undesirable reduced ionization rate during this process can be induced by carbon defects, which electronically deactivate phosphorus dopants in silicon.
format	article
author	Xuejiao Gao Bin Guan Abdelmadjid Mesli Kaixiang Chen Yaping Dan
author_facet	Xuejiao Gao Bin Guan Abdelmadjid Mesli Kaixiang Chen Yaping Dan
author_sort	Xuejiao Gao
title	Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
title_short	Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
title_full	Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
title_fullStr	Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
title_full_unstemmed	Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
title_sort	deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/50aa41e5e0484cee8b64606312319eb6
work_keys_str_mv	AT xuejiaogao deepleveltransientspectroscopicinvestigationofphosphorusdopedsiliconbyselfassembledmolecularmonolayers AT binguan deepleveltransientspectroscopicinvestigationofphosphorusdopedsiliconbyselfassembledmolecularmonolayers AT abdelmadjidmesli deepleveltransientspectroscopicinvestigationofphosphorusdopedsiliconbyselfassembledmolecularmonolayers AT kaixiangchen deepleveltransientspectroscopicinvestigationofphosphorusdopedsiliconbyselfassembledmolecularmonolayers AT yapingdan deepleveltransientspectroscopicinvestigationofphosphorusdopedsiliconbyselfassembledmolecularmonolayers
_version_	1718380671433441280

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

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