Regulating strain in perovskite thin films through charge-transport layers

Remnant tensile strain in the perovskite films induced in the thermal annealing step is a known source of material and device instabilities. Here Xue et al. use a thermal expandable hole transporting layer to compensate the strain and result in most stable wide-bandgap perovskite solar cells so far.

Guardado en:
Detalles Bibliográficos
Autores principales: Ding-Jiang Xue, Yi Hou, Shun-Chang Liu, Mingyang Wei, Bin Chen, Ziru Huang, Zongbao Li, Bin Sun, Andrew H. Proppe, Yitong Dong, Makhsud I. Saidaminov, Shana O. Kelley, Jin-Song Hu, Edward H. Sargent
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Q
Acceso en línea:https://doaj.org/article/50ece9c074ed4dbbadeadac74548d3ea
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:Remnant tensile strain in the perovskite films induced in the thermal annealing step is a known source of material and device instabilities. Here Xue et al. use a thermal expandable hole transporting layer to compensate the strain and result in most stable wide-bandgap perovskite solar cells so far.